Справочник IGBT. MMIX1X200N60B3

 

MMIX1X200N60B3 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: MMIX1X200N60B3

Тип управляющего канала: N-Channel

Максимальная рассеиваемая мощность (Pc): 625

Предельно-допустимое напряжение коллектор-эмиттер (Uce): 600

Напряжение насыщения коллектор-эмиттер (Ucesat): 1.7

Максимально допустимое напряжение эмиттер-затвор (Ueg): 20

Максимальный постоянный ток коллектора (Ic): 223

Максимальная температура перехода (Tj): 175

Время нарастания: 100

Емкость коллектора (Cc), pf: 570

Корпус: CHIP

Аналог (замена) для MMIX1X200N60B3

 

 

MMIX1X200N60B3 Datasheet (PDF)

1.1. mmix1x200n60b3h1.pdf Size:243K _igbt

MMIX1X200N60B3
MMIX1X200N60B3

Preliminary Technical Information VCES = 600V XPTTM 600V IGBT MMIX1X200N60B3H1 IC110 = 72A GenX3TM w/Diode ≤ ≤ VCE(sat) ≤ 1.7V ≤ ≤ (Electrically Isolated Tab) tfi(typ) = 110ns Extreme Light Punch Through C IGBT for 10-30kHz Switching G Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V E VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Conti

1.2. mmix1x200n60b3.pdf Size:233K _igbt

MMIX1X200N60B3
MMIX1X200N60B3

Preliminary Technical Information VCES = 600V XPTTM 600V IGBT MMIX1X200N60B3 IC110 = 120A GenX3TM ≤ ≤ VCE(sat) ≤ 1.7V ≤ ≤ (Electrically Isolated Tab) tfi(typ) = 110ns Extreme Light Punch Through C IGBT for 10-30kHz Switching G Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 175°C 600 V E VCGR TJ = 25°C to 175°C, RGE = 1MΩ 600 V VGES Continuous ±2

 1.3. mmix1x200n60b3h1.pdf Size:243K _ixys

MMIX1X200N60B3
MMIX1X200N60B3

Preliminary Technical Information VCES = 600V XPTTM 600V IGBT MMIX1X200N60B3H1 IC110 = 72A GenX3TM w/Diode ≤ ≤ VCE(sat) ≤ 1.7V ≤ ≤ (Electrically Isolated Tab) tfi(typ) = 110ns Extreme Light Punch Through C IGBT for 10-30kHz Switching G Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V E VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Conti

1.4. mmix1x200n60b3.pdf Size:233K _ixys

MMIX1X200N60B3
MMIX1X200N60B3

Preliminary Technical Information VCES = 600V XPTTM 600V IGBT MMIX1X200N60B3 IC110 = 120A GenX3TM ≤ ≤ VCE(sat) ≤ 1.7V ≤ ≤ (Electrically Isolated Tab) tfi(typ) = 110ns Extreme Light Punch Through C IGBT for 10-30kHz Switching G Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 175°C 600 V E VCGR TJ = 25°C to 175°C, RGE = 1MΩ 600 V VGES Continuous ±2

Другие IGBT... SII200N12 , SII300N06 , SII50N06 , SII75N06 , SII75N12 , MMIX1B15N300C , MMIX1B20N300C , MMIX1G120N120A3V1 , G7N60C , MMIX1X200N60B3H1 , MMIX1X340N65B4 , MMIX1Y100N120C3H1 , MMIX1Y82N120C3H1 , MMIX2S50N60B4D1 , MMIX4B22N300 , SIGC03T60E , SIGC03T60SE .

 

 
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