MMIX1X200N60B3 Spec and Replacement, IGBT Equivalent Finder, Cross Reference

MMIX1X200N60B3 Specs and Replacement

Type Designator: MMIX1X200N60B3

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 625 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 223 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃

tr ⓘ - Rise Time, typ: 100 nS

Coesⓘ - Output Capacitance, typ: 570 pF

Package: PLASTIC-24PIN

MMIX1X200N60B3 Substitution

- IGBT ⓘ Cross-Reference Search

MMIX1X200N60B3 datasheet

..1. Size:233K ixys
mmix1x200n60b3.pdf pdf_icon

Preliminary Technical Information VCES = 600V XPTTM 600V IGBT MMIX1X200N60B3 IC110 = 120A GenX3TM VCE(sat) 1.7V (Electrically Isolated Tab) tfi(typ) = 110ns Extreme Light Punch Through C IGBT for 10-30kHz Switching G Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 600 V E VCGR TJ = 25 C to 175 C, RGE = 1M 600 V VGES Continuous 2... See More ⇒

0.1. Size:243K ixys
mmix1x200n60b3h1.pdf pdf_icon

Preliminary Technical Information VCES = 600V XPTTM 600V IGBT MMIX1X200N60B3H1 IC110 = 72A GenX3TM w/Diode VCE(sat) 1.7V (Electrically Isolated Tab) tfi(typ) = 110ns Extreme Light Punch Through C IGBT for 10-30kHz Switching G Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V E VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Conti... See More ⇒

8.1. Size:241K ixys
mmix1x340n65b4.pdf pdf_icon

Advance Technical Information VCES = 650V XPTTM 650V IGBT MMIX1X340N65B4 IC90 = 295A GenX4TM VCE(sat) 1.7V tfi(typ) = 80ns Extreme Light Punch Through IGBT for 10-30kHz Switching C G E Maximum Ratings ymbol Test Conditions VCES TJ = 25 C to 175 C 650 V VCGR TJ = 25 C to 175 C, RGE =... See More ⇒

8.2. Size:299K ixys
mmix1x100n60b3h1.pdf pdf_icon

Preliminary Technical Information XPTTM 600V VCES = 600V MMIX1X100N60B3H1 GenX3TM w/ Diode IC90 = 60A VCE(sat) 1.80V (Electrically Isolated Tab) C Medium-Speed Low-Vsat PT IGBT for 10-30 kHz Switching G Symbol Test Conditions Maximum Ratings E VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V Isolated Tab VGES Continuous 20 V ... See More ⇒

Specs: SII200N12 , SII300N06 , SII50N06 , SII75N06 , SII75N12 , MMIX1B15N300C , MMIX1B20N300C , MMIX1G120N120A3V1 , CRG15T120BNR3S , MMIX1X200N60B3H1 , MMIX1X340N65B4 , MMIX1Y100N120C3H1 , MMIX1Y82N120C3H1 , MMIX2S50N60B4D1 , MMIX4B22N300 , SIGC03T60E , SIGC03T60SE .

Keywords - MMIX1X200N60B3 transistor spec

MMIX1X200N60B3 cross reference
MMIX1X200N60B3 equivalent finder
MMIX1X200N60B3 lookup
MMIX1X200N60B3 substitution
MMIX1X200N60B3 replacement

LIST

Last Update

IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE

MMIX1X200N60B3 PDF and Equivalents Search