IGC70T120T6RL - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IGC70T120T6RL

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc):

Tensión colector-emisor (Vce): 1200

Voltaje de saturación colector-emisor (Vce sat): 1.85

Tensión emisor-compuerta (Veg): 20

Corriente del colector DC máxima (Ic): 75

Temperatura operativa máxima (Tj), °C: 175

Tiempo de elevación:

Capacitancia de salida (Cc), pF: 290

Empaquetado / Estuche: CHIP

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IGC70T120T6RL Datasheet (PDF)

1.1. igc70t120t8rl.pdf Size:70K _igbt_a

IGC70T120T8RL IGBT4 Low Power Chip Features: Recommended for:  1200V Trench & Field stop technology  low / medium power modules C  low switching losses  positive temperature coefficient Applications:  easy paralleling  low / medium power drives  Qualified according to JEDEC for target G applications E Chip Type VCE ICn1 ) Die Size Package IGC70T120T8RL 1200V 75

1.2. igc70t120t6rm.pdf Size:70K _igbt_a

 IGC70T120T6RM IGBT4 Medium Power Chip FEATURES: • 1200V Trench + Field Stop technology This chip is used for: C • low switching losses • medium power modules • soft turn off • positive temperature coefficient Applications: • easy paralleling G • medium power drives E Chip Type VCE ICn Die Size Package IGC70T120T6RM 1200V 75A 9.12 x 7.71 mm2 sawn on foil

 1.3. igc70t120t8rq.pdf Size:77K _igbt_a

IGC70T120T8RQ High Speed IGBT in Trench and Fieldstop Technology Features: Recommended for:  1200V Trench + Field stop technology  power modules C  low switching losses  positive temperature coefficient Applications:  easy paralleling  high frequency drives G  UPS E  Welding  Solar inverters Chip Type VCE ICn1) Die Size Package IGC70T120T8RQ 1200V 75A

1.4. igc70t120t8rm.pdf Size:71K _igbt_a

IGC70T120T8RM IGBT4 Medium Power Chip Features: Recommended for:  1200V Trench + Field stop technology  medium power modules C  low switching losses  soft turn off Applications:  positive temperature coefficient  medium power drives  easy paralleling G  Qualified according to JEDEC for target E applications Chip Type VCE ICn1 ) Die Size Package IGC70T120T

 1.5. igc70t120t6rl.pdf Size:70K _igbt_a

 IGC70T120T6RL IGBT4 Low Power Chip FEATURES: • 1200V Trench + Field Stop technology This chip is used for: C • low switching losses • low / medium power modules • positive temperature coefficient • easy paralleling Applications: G • low / medium power drives E Chip Type VCE ICn Die Size Package IGC70T120T6RL 1200V 75A 9.12 x 7.71 mm2 sawn on foil MECHANICA

Otros transistores... SIGC03T60SNC , SIGC04T60 , SIGC04T60E , SIGC04T60G , SIGC04T60GE , SIGC04T60GS , SIGC04T60GSE , SIGC04T65E , IRG4PC60F , IGC70T120T6RL , IRGC100B120KB , IRGC100B120UB , IRGC100B60KB , IRGC100B60UB , IRGC15B120KB , IRGC15B120UB , IRGC16B120KB .