IGC70T120T6RL
IGBT. Datasheet pdf. Equivalent
Type Designator: IGC70T120T6RL
Type: IGBT
Type of IGBT Channel: N
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200
V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20
V
|Ic|ⓘ - Maximum Collector Current: 75
A @25℃
|VCEsat|ⓘ -
Collector-Emitter saturation Voltage, typ: 1.85
V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5
V
Tjⓘ -
Maximum Junction Temperature: 175
℃
Coesⓘ - Output Capacitance, typ: 290
pF
Package:
CHIP
IGC70T120T6RL
Transistor Equivalent Substitute - IGBT Cross-Reference Search
IGC70T120T6RL
Datasheet (PDF)
..1. Size:70K infineon
igc70t120t6rl.pdf 
IGC70T120T6RL IGBT4 Low Power Chip FEATURES: 1200V Trench + Field Stop technology This chip is used for:C low switching losses low / medium power modules positive temperature coefficient easy paralleling Applications: G low / medium power drives E Chip Type VCE ICn Die Size Package IGC70T120T6RL 1200V 75A 9.12 x 7.71 mm2 sawn on foil MECHANICA
2.1. Size:70K infineon
igc70t120t6rm.pdf
IGC70T120T6RM IGBT4 Medium Power Chip FEATURES: 1200V Trench + Field Stop technology This chip is used for:C low switching losses medium power modules soft turn off positive temperature coefficient Applications: easy paralleling G medium power drives E Chip Type VCE ICn Die Size Package IGC70T120T6RM 1200V 75A 9.12 x 7.71 mm2 sawn on foil
4.1. Size:70K infineon
igc70t120t8rl.pdf
IGC70T120T8RLIGBT4 Low Power ChipFeatures: Recommended for: 1200V Trench & Field stop technology low / medium power modules C low switching losses positive temperature coefficientApplications: easy paralleling low / medium power drives Qualified according to JEDEC for targetGapplications EChip Type VCE ICn1 ) Die Size PackageIGC70T120T8RL 1200V 75
4.2. Size:71K infineon
igc70t120t8rm.pdf
IGC70T120T8RMIGBT4 Medium Power ChipFeatures: Recommended for: 1200V Trench + Field stop technology medium power modulesC low switching losses soft turn offApplications: positive temperature coefficient medium power drives easy parallelingG Qualified according to JEDEC for targetEapplicationsChip Type VCE ICn1 ) Die Size PackageIGC70T120T
4.3. Size:77K infineon
igc70t120t8rq.pdf
IGC70T120T8RQHigh Speed IGBT in Trench and Fieldstop TechnologyFeatures: Recommended for: 1200V Trench + Field stop technology power modulesC low switching losses positive temperature coefficientApplications: easy paralleling high frequency drivesG UPSE Welding Solar invertersChip Type VCE ICn1) Die Size PackageIGC70T120T8RQ 1200V 75A
Datasheet: APT20GN60BG
, APT20GN60KG
, APT20GN60SG
, AOK20B60D1
, F3L30R06W1E3_B11
, WGW15G120N
, WGW15G120W
, IRG4MC50U
, JT075N065WED
, AOB10B60D
, AOK10B60D
, AOT10B60D
, NGB8207AB
, NGB8207B
, AOB15B60D
, IRGSL8B60K
, AOK15B60D
.
