GT50JR22
- IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: GT50JR22
Tipo de transistor: IGBT + Diode
Código de marcado: 50JR22
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 230
W
|Vce|ⓘ - Tensión máxima colector-emisor: 600
V
|Vge|ⓘ - Tensión máxima puerta-emisor: 25
V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 50
A
|VCEsat|ⓘ -
Voltaje de saturación colector-emisor, typ: 1.55
V @25℃
|VGEth|ⓘ -
Tensión máxima de puerta-umbral: 7.5
V
Tjⓘ -
Temperatura máxima de unión: 175
℃
trⓘ - Tiempo de subida, typ: 180
nS
Paquete / Cubierta:
TO-3PN
GT50JR22
Datasheet (PDF)
..1. Size:202K toshiba
gt50jr22.pdf 
GT50JR22Discrete IGBTs Silicon N-Channel IGBTGT50JR22GT50JR22GT50JR22GT50JR221. Applications1. Applications1. Applications1. Applications Dedicated to Current-Resonant Inverter Switching ApplicationsNote: The product(s) described herein should not be used for any other application.2. Features2. Features2. Features2. Features(1) 6.5th generation(2) The RC-IGB
9.1. Size:226K toshiba
gt50j328.pdf
GT50J328 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J328 Current Resonance Inverter Switching Application Unit: mmFourth Generation IGBT Enhancement mode type High speed : tf = 0.1 s (Typ.) Low saturation voltage : VCE (sat) = 2.0 V (Typ.) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-emitter volt
9.2. Size:439K toshiba
gt50j301.pdf
GT50J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J301 HIGH POWER SWITCHING APPLICATIONS Unit: mmMOTOR CONTROL APPLICATIONS Third generation IGBT Enhancement mode type High speed : tf = 0.30s (Max.) Low saturation voltage : VCE (sat) = 2.7V (Max.) FRD included between emitter and collector ABSOLUTE MAXIMUM RATINGS (Ta = 25C) CHA
9.3. Size:198K toshiba
gt50j325.pdf
GT50J325 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J325 High Power Switching Applications Unit: mmFast Switching Applications Fourth generation IGBT Enhancement mode type Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.05 s (typ.) Low switching loss: Eon = 1.30 mJ (typ.) : Eoff = 1.34 mJ
9.5. Size:615K toshiba
gt50j322.pdf
GT50J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J322 FOURTH GENERATION IGBT Unit: mmCURRENT RESONANCE INVERTER SWITCHING APPLICATIONS FRD included between emitter and collector Enhancement mode type High speed : tf = 0.25s (Typ.) (IC = 50A) Low saturation voltage : VCE (sat) = 2.1V (Typ.) (IC = 50A) ABSOLUTE MAXIMUM RATINGS (Ta = 25
9.6. Size:440K toshiba
gt50j102.pdf
GT50J102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J102 HIGH POWER SWITCHING APPLICATIONS Unit: mmMOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed. : tf = 0.30s (Max.) Low saturation voltage. : VCE(sat) = 2.7V (Max.) ABSOLUTE MAXIMUM RATINGS (Ta = 25C) CHARACTERISTIC SYMBOL RATING UNITCollector-Emit
9.7. Size:191K toshiba
gt50j121.pdf
GT50J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J121 High Power Switching Applications Unit: mmFast Switching Applications Fourth-generation IGBT Enhancement mode type Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.05 s (typ.) Low switching loss: Eon = 1.30 mJ (typ.) : Eoff = 1.34 mJ
9.8. Size:244K toshiba
gt50j341.pdf
GT50J341Discrete IGBTs Silicon N-Channel IGBTGT50J341GT50J341GT50J341GT50J3411. Applications1. Applications1. Applications1. Applications Dedicated to Current-Resonant Inverter Switching ApplicationsNote: The product(s) described herein should not be used for any other application.2. Features2. Features2. Features2. Features(1) Sixth generation(2) Enhancemen
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