GT50JR22 Todos los transistores

 

GT50JR22 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: GT50JR22

Código: 50JR22

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 230

Tensión colector-emisor (Vce): 600

Voltaje de saturación colector-emisor (Vce sat): 2.2

Tensión emisor-compuerta (Veg): 25

Corriente del colector DC máxima (Ic): 50

Temperatura operativa máxima (Tj), °C: 175

Tiempo de elevación: 180

Empaquetado / Estuche: TO-3PN

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GT50JR22 Datasheet (PDF)

..1. gt50jr22.pdf Size:202K _toshiba

GT50JR22 GT50JR22

GT50JR22Discrete IGBTs Silicon N-Channel IGBTGT50JR22GT50JR22GT50JR22GT50JR221. Applications1. Applications1. Applications1. Applications Dedicated to Current-Resonant Inverter Switching ApplicationsNote: The product(s) described herein should not be used for any other application.2. Features2. Features2. Features2. Features(1) 6.5th generation(2) The RC-IGB

9.1. gt50j301.pdf Size:439K _toshiba

GT50JR22 GT50JR22

GT50J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J301 HIGH POWER SWITCHING APPLICATIONS Unit: mmMOTOR CONTROL APPLICATIONS Third generation IGBT Enhancement mode type High speed : tf = 0.30s (Max.) Low saturation voltage : VCE (sat) = 2.7V (Max.) FRD included between emitter and collector ABSOLUTE MAXIMUM RATINGS (Ta = 25C) CHA

9.2. gt50j121.pdf Size:191K _toshiba

GT50JR22 GT50JR22

GT50J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J121 High Power Switching Applications Unit: mmFast Switching Applications Fourth-generation IGBT Enhancement mode type Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.05 s (typ.) Low switching loss: Eon = 1.30 mJ (typ.) : Eoff = 1.34 mJ

 9.3. gt50j328.pdf Size:226K _toshiba

GT50JR22 GT50JR22

GT50J328 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J328 Current Resonance Inverter Switching Application Unit: mmFourth Generation IGBT Enhancement mode type High speed : tf = 0.1 s (Typ.) Low saturation voltage : VCE (sat) = 2.0 V (Typ.) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-emitter volt

9.4. gt50j322.pdf Size:615K _toshiba

GT50JR22 GT50JR22

GT50J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J322 FOURTH GENERATION IGBT Unit: mmCURRENT RESONANCE INVERTER SWITCHING APPLICATIONS FRD included between emitter and collector Enhancement mode type High speed : tf = 0.25s (Typ.) (IC = 50A) Low saturation voltage : VCE (sat) = 2.1V (Typ.) (IC = 50A) ABSOLUTE MAXIMUM RATINGS (Ta = 25

 9.5. gt50j341.pdf Size:244K _toshiba

GT50JR22 GT50JR22

GT50J341Discrete IGBTs Silicon N-Channel IGBTGT50J341GT50J341GT50J341GT50J3411. Applications1. Applications1. Applications1. Applications Dedicated to Current-Resonant Inverter Switching ApplicationsNote: The product(s) described herein should not be used for any other application.2. Features2. Features2. Features2. Features(1) Sixth generation(2) Enhancemen

9.6. gt50j325.pdf Size:198K _toshiba

GT50JR22 GT50JR22

GT50J325 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J325 High Power Switching Applications Unit: mmFast Switching Applications Fourth generation IGBT Enhancement mode type Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.05 s (typ.) Low switching loss: Eon = 1.30 mJ (typ.) : Eoff = 1.34 mJ

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