All IGBT. GT50JR22 Datasheet

 

GT50JR22 IGBT. Datasheet pdf. Equivalent


   Type Designator: GT50JR22
   Type: IGBT
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 230
   Maximum Collector-Emitter Voltage |Vce|, V: 600
   Maximum Gate-Emitter Voltage |Vge|, V: 25
   Maximum Collector Current |Ic| @25℃, A: 50
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.55
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 180
   Package: TO-3PN

 GT50JR22 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

GT50JR22 Datasheet (PDF)

 ..1. Size:202K  toshiba
gt50jr22.pdf

GT50JR22 GT50JR22

GT50JR22Discrete IGBTs Silicon N-Channel IGBTGT50JR22GT50JR22GT50JR22GT50JR221. Applications1. Applications1. Applications1. Applications Dedicated to Current-Resonant Inverter Switching ApplicationsNote: The product(s) described herein should not be used for any other application.2. Features2. Features2. Features2. Features(1) 6.5th generation(2) The RC-IGB

 9.1. Size:226K  toshiba
gt50j328.pdf

GT50JR22 GT50JR22

GT50J328 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J328 Current Resonance Inverter Switching Application Unit: mmFourth Generation IGBT Enhancement mode type High speed : tf = 0.1 s (Typ.) Low saturation voltage : VCE (sat) = 2.0 V (Typ.) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-emitter volt

 9.2. Size:439K  toshiba
gt50j301.pdf

GT50JR22 GT50JR22

GT50J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J301 HIGH POWER SWITCHING APPLICATIONS Unit: mmMOTOR CONTROL APPLICATIONS Third generation IGBT Enhancement mode type High speed : tf = 0.30s (Max.) Low saturation voltage : VCE (sat) = 2.7V (Max.) FRD included between emitter and collector ABSOLUTE MAXIMUM RATINGS (Ta = 25C) CHA

 9.3. Size:198K  toshiba
gt50j325.pdf

GT50JR22 GT50JR22

GT50J325 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J325 High Power Switching Applications Unit: mmFast Switching Applications Fourth generation IGBT Enhancement mode type Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.05 s (typ.) Low switching loss: Eon = 1.30 mJ (typ.) : Eoff = 1.34 mJ

 9.4. Size:256K  toshiba
gt50j101.pdf

GT50JR22 GT50JR22

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 9.5. Size:615K  toshiba
gt50j322.pdf

GT50JR22 GT50JR22

GT50J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J322 FOURTH GENERATION IGBT Unit: mmCURRENT RESONANCE INVERTER SWITCHING APPLICATIONS FRD included between emitter and collector Enhancement mode type High speed : tf = 0.25s (Typ.) (IC = 50A) Low saturation voltage : VCE (sat) = 2.1V (Typ.) (IC = 50A) ABSOLUTE MAXIMUM RATINGS (Ta = 25

 9.6. Size:440K  toshiba
gt50j102.pdf

GT50JR22 GT50JR22

GT50J102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J102 HIGH POWER SWITCHING APPLICATIONS Unit: mmMOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed. : tf = 0.30s (Max.) Low saturation voltage. : VCE(sat) = 2.7V (Max.) ABSOLUTE MAXIMUM RATINGS (Ta = 25C) CHARACTERISTIC SYMBOL RATING UNITCollector-Emit

 9.7. Size:191K  toshiba
gt50j121.pdf

GT50JR22 GT50JR22

GT50J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J121 High Power Switching Applications Unit: mmFast Switching Applications Fourth-generation IGBT Enhancement mode type Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.05 s (typ.) Low switching loss: Eon = 1.30 mJ (typ.) : Eoff = 1.34 mJ

 9.8. Size:244K  toshiba
gt50j341.pdf

GT50JR22 GT50JR22

GT50J341Discrete IGBTs Silicon N-Channel IGBTGT50J341GT50J341GT50J341GT50J3411. Applications1. Applications1. Applications1. Applications Dedicated to Current-Resonant Inverter Switching ApplicationsNote: The product(s) described herein should not be used for any other application.2. Features2. Features2. Features2. Features(1) Sixth generation(2) Enhancemen

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