GT50JR22 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: GT50JR22

Маркировка: 50JR22

Тип управляющего канала: N-Channel

Максимальная рассеиваемая мощность (Pc): 230

Предельно-допустимое напряжение коллектор-эмиттер (Uce): 600

Напряжение насыщения коллектор-эмиттер (Ucesat): 2.2

Максимально допустимое напряжение эмиттер-затвор (Ueg): 25

Максимальный постоянный ток коллектора (Ic): 50

Максимальная температура перехода (Tj): 175

Время нарастания: 180

Корпус: TO-3PN

Аналог (замена) для GT50JR22

GT50JR22 Datasheet (PDF)

1.1. gt50jr22.pdf Size:202K _update

GT50JR22 Discrete IGBTs Silicon N-Channel IGBT GT50JR22 GT50JR22 GT50JR22 GT50JR22 1. Applications 1. Applications 1. Applications 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications Note: The product(s) described herein should not be used for any other application. 2. Features 2. Features 2. Features 2. Features (1) 6.5th generation (2) The RC-IGB

5.1. gt50j301 en wm 20061101.pdf Size:439K _toshiba

GT50J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J301 HIGH POWER SWITCHING APPLICATIONS Unit: mm MOTOR CONTROL APPLICATIONS Third generation IGBT Enhancement mode type High speed : tf = 0.30?s (Max.) Low saturation voltage : VCE (sat) = 2.7V (Max.) FRD included between emitter and collector ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) CHAR

5.2. gt50j328 110308.pdf Size:226K _toshiba

GT50J328 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J328 Current Resonance Inverter Switching Application Unit: mm Fourth Generation IGBT • Enhancement mode type • High speed : tf = 0.1 ?s (Typ.) • Low saturation voltage : VCE (sat) = 2.0 V (Typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-emitter volta

 5.3. gt50j121 061101.pdf Size:191K _toshiba

GT50J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J121 High Power Switching Applications Unit: mm Fast Switching Applications • Fourth-generation IGBT • Enhancement mode type • Fast switching (FS): Operating frequency up to 50 kHz (reference) • High speed: tf = 0.05 ?s (typ.) • Low switching loss: Eon = 1.30 mJ (typ.) : Eoff = 1.34 mJ

5.4. gt50j341 110608.pdf Size:244K _toshiba

GT50J341 Discrete IGBTs Silicon N-Channel IGBT GT50J341 GT50J341 GT50J341 GT50J341 1. Applications 1. Applications 1. Applications 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications Note: The product(s) described herein should not be used for any other application. 2. Features 2. Features 2. Features 2. Features (1) Sixth generation (2) Enhancemen

 5.5. gt50j322 061101.pdf Size:615K _toshiba

GT50J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J322 FOURTH GENERATION IGBT Unit: mm CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS FRD included between emitter and collector Enhancement mode type High speed : tf = 0.25?s (Typ.) (IC = 50A) Low saturation voltage : VCE (sat) = 2.1V (Typ.) (IC = 50A) ABSOLUTE MAXIMUM RATINGS (Ta = 25�

5.6. gt50j325 061101.pdf Size:198K _toshiba

GT50J325 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J325 High Power Switching Applications Unit: mm Fast Switching Applications • Fourth generation IGBT • Enhancement mode type • Fast switching (FS): Operating frequency up to 50 kHz (reference) • High speed: tf = 0.05 ?s (typ.) • Low switching loss: Eon = 1.30 mJ (typ.) : Eoff = 1.34 mJ

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