Справочник IGBT. GT50JR22

 

GT50JR22 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: GT50JR22
   Тип транзистора: IGBT + Diode
   Маркировка: 50JR22
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 230 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 25 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 50 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.55 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 7.5 V
   Tjⓘ - Максимальная температура перехода: 175 ℃
   trⓘ - Время нарастания типовое: 180 nS
   Тип корпуса: TO-3PN

 Аналог (замена) для GT50JR22

 

 

GT50JR22 Datasheet (PDF)

 ..1. Size:202K  toshiba
gt50jr22.pdf

GT50JR22
GT50JR22

GT50JR22Discrete IGBTs Silicon N-Channel IGBTGT50JR22GT50JR22GT50JR22GT50JR221. Applications1. Applications1. Applications1. Applications Dedicated to Current-Resonant Inverter Switching ApplicationsNote: The product(s) described herein should not be used for any other application.2. Features2. Features2. Features2. Features(1) 6.5th generation(2) The RC-IGB

 9.1. Size:226K  toshiba
gt50j328.pdf

GT50JR22
GT50JR22

GT50J328 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J328 Current Resonance Inverter Switching Application Unit: mmFourth Generation IGBT Enhancement mode type High speed : tf = 0.1 s (Typ.) Low saturation voltage : VCE (sat) = 2.0 V (Typ.) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-emitter volt

 9.2. Size:439K  toshiba
gt50j301.pdf

GT50JR22
GT50JR22

GT50J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J301 HIGH POWER SWITCHING APPLICATIONS Unit: mmMOTOR CONTROL APPLICATIONS Third generation IGBT Enhancement mode type High speed : tf = 0.30s (Max.) Low saturation voltage : VCE (sat) = 2.7V (Max.) FRD included between emitter and collector ABSOLUTE MAXIMUM RATINGS (Ta = 25C) CHA

 9.3. Size:198K  toshiba
gt50j325.pdf

GT50JR22
GT50JR22

GT50J325 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J325 High Power Switching Applications Unit: mmFast Switching Applications Fourth generation IGBT Enhancement mode type Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.05 s (typ.) Low switching loss: Eon = 1.30 mJ (typ.) : Eoff = 1.34 mJ

 9.4. Size:256K  toshiba
gt50j101.pdf

GT50JR22
GT50JR22

eet4U.com w.wawa

 9.5. Size:615K  toshiba
gt50j322.pdf

GT50JR22
GT50JR22

GT50J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J322 FOURTH GENERATION IGBT Unit: mmCURRENT RESONANCE INVERTER SWITCHING APPLICATIONS FRD included between emitter and collector Enhancement mode type High speed : tf = 0.25s (Typ.) (IC = 50A) Low saturation voltage : VCE (sat) = 2.1V (Typ.) (IC = 50A) ABSOLUTE MAXIMUM RATINGS (Ta = 25

 9.6. Size:440K  toshiba
gt50j102.pdf

GT50JR22
GT50JR22

GT50J102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J102 HIGH POWER SWITCHING APPLICATIONS Unit: mmMOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed. : tf = 0.30s (Max.) Low saturation voltage. : VCE(sat) = 2.7V (Max.) ABSOLUTE MAXIMUM RATINGS (Ta = 25C) CHARACTERISTIC SYMBOL RATING UNITCollector-Emit

 9.7. Size:191K  toshiba
gt50j121.pdf

GT50JR22
GT50JR22

GT50J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J121 High Power Switching Applications Unit: mmFast Switching Applications Fourth-generation IGBT Enhancement mode type Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.05 s (typ.) Low switching loss: Eon = 1.30 mJ (typ.) : Eoff = 1.34 mJ

 9.8. Size:244K  toshiba
gt50j341.pdf

GT50JR22
GT50JR22

GT50J341Discrete IGBTs Silicon N-Channel IGBTGT50J341GT50J341GT50J341GT50J3411. Applications1. Applications1. Applications1. Applications Dedicated to Current-Resonant Inverter Switching ApplicationsNote: The product(s) described herein should not be used for any other application.2. Features2. Features2. Features2. Features(1) Sixth generation(2) Enhancemen

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History: FGH40N60SMDF

 

 
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