2PG001 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2PG001

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 40

Tensión colector-emisor (Vce): 300

Voltaje de saturación colector-emisor (Vce sat): 2.5

Tensión emisor-compuerta (Veg): 30

Corriente del colector DC máxima (Ic): 30

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación: 400

Capacitancia de salida (Cc), pF: 86

Empaquetado / Estuche: TO-220F

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2PG001 Datasheet (PDF)

1.1. 2pg001.pdf Size:300K _update_igbt

 This product complies with the RoHS Directive (EU 2002/95/EC). IGBT 2PG001 N-channel enhancement mode IGBT For plasma display panel drive For high speed switching circuits  Features  Package  Low collector-emitter saturation voltage: VCE(sat) < 2.5 V  Code  High speed hall time: tf = 250 nsec(typ.) TO-220F-A1  Marking Symbol: 2PG001  Absolute Maximum Ratings TC

1.2. 2pg001.pdf Size:300K _panasonic

 This product complies with the RoHS Directive (EU 2002/95/EC). IGBT 2PG001 N-channel enhancement mode IGBT For plasma display panel drive For high speed switching circuits  Features  Package  Low collector-emitter saturation voltage: VCE(sat) < 2.5 V  Code  High speed hall time: tf = 250 nsec(typ.) TO-220F-A1  Marking Symbol: 2PG001  Absolute Maximum Ratings TC

 5.1. 2pg006.pdf Size:398K _panasonic

 This product complies with the RoHS Directive (EU 2002/95/EC). IGBT 2PG006 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits  Package  Features  Code  Low collector-emitter saturation voltage: VCE(sat) < 2.4 V TO-220D-A1  High-speed switching: tf = 175 ns (typ.)  Marking Symbol: 2PG006  Pin Name  Absolute

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