2PG001 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2PG001
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 40 W
|Vce|ⓘ - Tensión máxima colector-emisor: 300 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.5 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 400 nS
Coesⓘ - Capacitancia de salida, typ: 86 pF
Paquete / Cubierta: TO-220F
Búsqueda de reemplazo de 2PG001 IGBT
2PG001 Datasheet (PDF)
2pg001.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).IGBT 2PG001N-channel enhancement mode IGBTFor plasma display panel driveFor high speed switching circuits Features Package Low collector-emitter saturation voltage: VCE(sat)
2pg006.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).IGBT 2PG006Silicon N-channel enhancement IGBTFor plasma display panel driveFor high speed switching circuits Package Features Code Low collector-emitter saturation voltage: VCE(sat)
2pg009.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).IGBT 2PG009Silicon N-channel enhancement IGBTFor plasma display panel driveFor high speed switching circuits Features Package Low collector-emitter saturation voltage: VCE(sat)
Otros transistores... FGA6560WDF , FGH30S130P , GT40WR21 , FGM603 , FGT312 , FGT313 , FGT412 , FGT612 , IRG7S313U , IKW30N65WR5 , MGD633 , GT20D201 , MBQ40T120FES , GT40RR21 , MBQ50T65FESC , MBQ60T65PES , JNG25N120HS .
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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