All IGBT. 2PG001 Datasheet

 

2PG001 IGBT. Datasheet pdf. Equivalent

Type Designator: 2PG001

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 40

Maximum Collector-Emitter Voltage |Vce|, V: 300

Collector-Emitter saturation Voltage |Vcesat|, V: 2.5

Maximum Gate-Emitter Voltage |Veg|, V: 30

Maximum Collector Current |Ic|, A: 30

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 400

Maximum Collector Capacity (Cc), pF: 86

Package: TO-220F

2PG001 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

2PG001 Datasheet (PDF)

1.1. 2pg001.pdf Size:300K _update_igbt

2PG001
2PG001

 This product complies with the RoHS Directive (EU 2002/95/EC). IGBT 2PG001 N-channel enhancement mode IGBT For plasma display panel drive For high speed switching circuits  Features  Package  Low collector-emitter saturation voltage: VCE(sat) < 2.5 V  Code  High speed hall time: tf = 250 nsec(typ.) TO-220F-A1  Marking Symbol: 2PG001  Absolute Maximum Ratings TC

5.1. 2pg006.pdf Size:398K _panasonic

2PG001
2PG001

 This product complies with the RoHS Directive (EU 2002/95/EC). IGBT 2PG006 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits  Package  Features  Code  Low collector-emitter saturation voltage: VCE(sat) < 2.4 V TO-220D-A1  High-speed switching: tf = 175 ns (typ.)  Marking Symbol: 2PG006  Pin Name  Absolute

Datasheet: FGA6560WDF , FGH30S130P , GT40WR21 , FGM603 , FGT312 , FGT313 , FGT412 , FGT612 , 10N50E1D , IKW30N65WR5 , MGD633 , GT20D201 , MBQ40T120FES , GT40RR21 , MBQ50T65FESC , , .

 

 
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IGBT: MBQ50T65FESC | GT40RR21 | MBQ40T120FES | GT20D201 | MGD633 | IKW30N65WR5 | 2PG001 | FGT612 | FGT412 | FGT313 |

 

 

 
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