All IGBT. 2PG001 Datasheet

 

2PG001 Datasheet and Replacement


   Type Designator: 2PG001
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 40 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 300 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 30 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 400 nS
   Coesⓘ - Output Capacitance, typ: 86 pF
   Qg ⓘ - Total Gate Charge, typ: 25 nC
   Package: TO-220F
 

 2PG001 substitution

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2PG001 Datasheet (PDF)

 ..1. Size:300K  panasonic
 2pg001.pdf pdf_icon

2PG001

This product complies with the RoHS Directive (EU 2002/95/EC).IGBT 2PG001N-channel enhancement mode IGBTFor plasma display panel driveFor high speed switching circuits Features Package Low collector-emitter saturation voltage: VCE(sat)

 9.1. Size:398K  panasonic
 2pg006.pdf pdf_icon

2PG001

This product complies with the RoHS Directive (EU 2002/95/EC).IGBT 2PG006Silicon N-channel enhancement IGBTFor plasma display panel driveFor high speed switching circuits Package Features Code Low collector-emitter saturation voltage: VCE(sat)

 9.2. Size:417K  fuji
 2pg009.pdf pdf_icon

2PG001

This product complies with the RoHS Directive (EU 2002/95/EC).IGBT 2PG009Silicon N-channel enhancement IGBTFor plasma display panel driveFor high speed switching circuits Features Package Low collector-emitter saturation voltage: VCE(sat)

Datasheet: FGA6560WDF , FGH30S130P , GT40WR21 , FGM603 , FGT312 , FGT313 , FGT412 , FGT612 , IRG7S313U , IKW30N65WR5 , MGD633 , GT20D201 , MBQ40T120FES , GT40RR21 , MBQ50T65FESC , MBQ60T65PES , JNG25N120HS .

Keywords - 2PG001 transistor datasheet

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