2PG001 Datasheet. Specs and Replacement

Type Designator: 2PG001  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 40 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 300 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 30 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃

tr ⓘ - Rise Time, typ: 400 nS

Coesⓘ - Output Capacitance, typ: 86 pF

Package: TO-220F

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2PG001 datasheet

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2PG001

This product complies with the RoHS Directive (EU 2002/95/EC). IGBT 2PG001 N-channel enhancement mode IGBT For plasma display panel drive For high speed switching circuits Features Package Low collector-emitter saturation voltage VCE(sat) ... See More ⇒

 9.1. Size:398K  panasonic
 2pg006.pdf pdf_icon

2PG001

This product complies with the RoHS Directive (EU 2002/95/EC). IGBT 2PG006 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits Package Features Code Low collector-emitter saturation voltage VCE(sat) ... See More ⇒

 9.2. Size:417K  fuji
 2pg009.pdf pdf_icon

2PG001

This product complies with the RoHS Directive (EU 2002/95/EC). IGBT 2PG009 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits Features Package Low collector-emitter saturation voltage VCE(sat) ... See More ⇒

Specs: FGA6560WDF, FGH30S130P, GT40WR21, FGM603, FGT312, FGT313, FGT412, FGT612, IXRH40N120, IKW30N65WR5, MGD633, GT20D201, MBQ40T120FES, GT40RR21, MBQ50T65FESC, MBQ60T65PES, JNG25N120HS

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