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MBQ50T65FESC - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MBQ50T65FESC

Código: 50T65FESC

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 375

Tensión colector-emisor (Vce): 650

Voltaje de saturación colector-emisor (Vce sat): 1.85

Tensión emisor-compuerta (Veg): 20

Corriente del colector DC máxima (Ic): 100

Temperatura operativa máxima (Tj), °C: 175

Tiempo de elevación: 60

Capacitancia de salida (Cc), pF: 238

Empaquetado / Estuche: TO247

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MBQ50T65FESC Datasheet (PDF)

..1. mbq50t65fesc.pdf Size:1882K _magnachip

MBQ50T65FESC
MBQ50T65FESC

MBQ50T65FESC 650V Field Stop IGBTGeneral Description Features High Speed Switching & Low Power Loss This IGBT is produced using advanced MagnaChips Field V = 1.85V @ I = 50A CE(sat) C Stop Trench IGBT Technology, which provides high switching E = 0.55mJ @ T = 25C off C series and excellent quality. High Input Impedance t = 80ns (typ.) @di /dt

5.1. mbq50t65fdsc.pdf Size:1388K _magnachip

MBQ50T65FESC
MBQ50T65FESC

MBQ50T65FDSC 650V Field Stop IGBT General Description Features High Speed Switching & Low Power Loss This IGBT is produced using advanced MagnaChips Field V = 1.95V @ I = 50A CE(sat) C Stop Trench IGBT Technology, which provides high switching Eoff = 0.37mJ @ TC = 25C series and excellent quality. High Input Impedance t = 80ns (typ.) @di /dt = 1

Otros transistores... FGT412 , FGT612 , 2PG001 , IKW30N65WR5 , MGD633 , GT20D201 , MBQ40T120FES , GT40RR21 , IRG4PC50W , MBQ60T65PES , JNG25N120HS , SSG60N60N , PDMB100E6 , SL40N60FL , MBQ50T65FDSC , STGW38IH120D , FGH75T65UPD .

 

 
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