MBQ50T65FESC Datasheet. Specs and Replacement

Type Designator: MBQ50T65FESC  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 375 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 100 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃

tr ⓘ - Rise Time, typ: 60 nS

Coesⓘ - Output Capacitance, typ: 238 pF

Package: TO247

  📄📄 Copy 

 MBQ50T65FESC Substitution

- IGBTⓘ Cross-Reference Search

 

MBQ50T65FESC datasheet

 ..1. Size:1882K  magnachip
 mbq50t65fesc.pdf pdf_icon

MBQ50T65FESC

MBQ50T65FESC 650V Field Stop IGBT General Description Features High Speed Switching & Low Power Loss This IGBT is produced using advanced MagnaChip s Field V = 1.85V @ I = 50A CE(sat) C Stop Trench IGBT Technology, which provides high switching E = 0.55mJ @ T = 25 C off C series and excellent quality. High Input Impedance t = 80ns (typ.) @di /dt ... See More ⇒

 5.1. Size:1388K  magnachip
 mbq50t65fdsc.pdf pdf_icon

MBQ50T65FESC

MBQ50T65FDSC 650V Field Stop IGBT General Description Features High Speed Switching & Low Power Loss This IGBT is produced using advanced MagnaChip s Field V = 1.95V @ I = 50A CE(sat) C Stop Trench IGBT Technology, which provides high switching Eoff = 0.37mJ @ TC = 25 C series and excellent quality. High Input Impedance t = 80ns (typ.) @di /dt = 1... See More ⇒

Specs: FGT412, FGT612, 2PG001, IKW30N65WR5, MGD633, GT20D201, MBQ40T120FES, GT40RR21, YGW75N65F1, MBQ60T65PES, JNG25N120HS, SSG60N60N, PDMB100E6, SL40N60FL, MBQ50T65FDSC, STGW38IH120D, FGH75T65UPD

Keywords - MBQ50T65FESC transistor spec

 MBQ50T65FESC cross reference
 MBQ50T65FESC equivalent finder
 MBQ50T65FESC lookup
 MBQ50T65FESC substitution
 MBQ50T65FESC replacement