All IGBT. MBQ50T65FESC Datasheet

 

MBQ50T65FESC Datasheet and Replacement


   Type Designator: MBQ50T65FESC
   Type: IGBT + Anti-Parallel Diode
   Marking Code: 50T65FESC
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 375 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.2 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 60 nS
   Coesⓘ - Output Capacitance, typ: 238 pF
   Qg ⓘ - Total Gate Charge, typ: 287 nC
   Package: TO247
 

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MBQ50T65FESC Datasheet (PDF)

 ..1. Size:1882K  magnachip
 mbq50t65fesc.pdf pdf_icon

MBQ50T65FESC

MBQ50T65FESC 650V Field Stop IGBTGeneral Description Features High Speed Switching & Low Power Loss This IGBT is produced using advanced MagnaChips Field V = 1.85V @ I = 50A CE(sat) C Stop Trench IGBT Technology, which provides high switching E = 0.55mJ @ T = 25C off C series and excellent quality. High Input Impedance t = 80ns (typ.) @di /dt

 5.1. Size:1388K  magnachip
 mbq50t65fdsc.pdf pdf_icon

MBQ50T65FESC

MBQ50T65FDSC 650V Field Stop IGBT General Description Features High Speed Switching & Low Power Loss This IGBT is produced using advanced MagnaChips Field V = 1.95V @ I = 50A CE(sat) C Stop Trench IGBT Technology, which provides high switching Eoff = 0.37mJ @ TC = 25C series and excellent quality. High Input Impedance t = 80ns (typ.) @di /dt = 1

Datasheet: FGT412 , FGT612 , 2PG001 , IKW30N65WR5 , MGD633 , GT20D201 , MBQ40T120FES , GT40RR21 , IRG7S313U , MBQ60T65PES , JNG25N120HS , SSG60N60N , PDMB100E6 , SL40N60FL , MBQ50T65FDSC , STGW38IH120D , FGH75T65UPD .

Keywords - MBQ50T65FESC transistor datasheet

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