MBQ50T65FDSC Todos los transistores

 

MBQ50T65FDSC - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MBQ50T65FDSC
   Tipo de transistor: IGBT + Diode
   Código de marcado: 50T65FDSC
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 273 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 100 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.95 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.2 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 60 nS
   Coesⓘ - Capacitancia de salida, typ: 238 pF
   Qgⓘ - Carga total de la puerta, typ: 293 nC
   Paquete / Cubierta: TO247
     - Selección de transistores por parámetros

 

MBQ50T65FDSC Datasheet (PDF)

 ..1. Size:1388K  magnachip
 mbq50t65fdsc.pdf pdf_icon

MBQ50T65FDSC

MBQ50T65FDSC 650V Field Stop IGBT General Description Features High Speed Switching & Low Power Loss This IGBT is produced using advanced MagnaChips Field V = 1.95V @ I = 50A CE(sat) C Stop Trench IGBT Technology, which provides high switching Eoff = 0.37mJ @ TC = 25C series and excellent quality. High Input Impedance t = 80ns (typ.) @di /dt = 1

 5.1. Size:1882K  magnachip
 mbq50t65fesc.pdf pdf_icon

MBQ50T65FDSC

MBQ50T65FESC 650V Field Stop IGBTGeneral Description Features High Speed Switching & Low Power Loss This IGBT is produced using advanced MagnaChips Field V = 1.85V @ I = 50A CE(sat) C Stop Trench IGBT Technology, which provides high switching E = 0.55mJ @ T = 25C off C series and excellent quality. High Input Impedance t = 80ns (typ.) @di /dt

Otros transistores... MBQ40T120FES , GT40RR21 , MBQ50T65FESC , MBQ60T65PES , JNG25N120HS , SSG60N60N , PDMB100E6 , SL40N60FL , IHW15N120R3 , STGW38IH120D , FGH75T65UPD , STGB7NC60KD , STGF7NC60KD , STGP7NC60KD , AOT15B65M1 , AOB15B65M1 , GT60M104 .

 

 
Back to Top

 


 
.