MBQ50T65FDSC Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MBQ50T65FDSC  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 273 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 100 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.95 V @25℃

trⓘ - Tiempo de subida, typ: 60 nS

Coesⓘ - Capacitancia de salida, typ: 238 pF

Encapsulados: TO247

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MBQ50T65FDSC datasheet

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MBQ50T65FDSC

MBQ50T65FDSC 650V Field Stop IGBT General Description Features High Speed Switching & Low Power Loss This IGBT is produced using advanced MagnaChip s Field V = 1.95V @ I = 50A CE(sat) C Stop Trench IGBT Technology, which provides high switching Eoff = 0.37mJ @ TC = 25 C series and excellent quality. High Input Impedance t = 80ns (typ.) @di /dt = 1

 5.1. Size:1882K  magnachip
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MBQ50T65FDSC

MBQ50T65FESC 650V Field Stop IGBT General Description Features High Speed Switching & Low Power Loss This IGBT is produced using advanced MagnaChip s Field V = 1.85V @ I = 50A CE(sat) C Stop Trench IGBT Technology, which provides high switching E = 0.55mJ @ T = 25 C off C series and excellent quality. High Input Impedance t = 80ns (typ.) @di /dt

Otros transistores... MBQ40T120FES, GT40RR21, MBQ50T65FESC, MBQ60T65PES, JNG25N120HS, SSG60N60N, PDMB100E6, SL40N60FL, GT30F132, STGW38IH120D, FGH75T65UPD, STGB7NC60KD, STGF7NC60KD, STGP7NC60KD, AOT15B65M1, AOB15B65M1, GT60M104