MBQ50T65FDSC Todos los transistores

 

MBQ50T65FDSC - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MBQ50T65FDSC

Código: 50T65FDSC

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 273

Tensión colector-emisor (Vce): 650

Voltaje de saturación colector-emisor (Vce sat): 1.95

Tensión emisor-compuerta (Veg): 20

Corriente del colector DC máxima (Ic): 100

Temperatura operativa máxima (Tj), °C: 175

Tiempo de elevación: 60

Capacitancia de salida (Cc), pF: 238

Empaquetado / Estuche: TO247

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MBQ50T65FDSC Datasheet (PDF)

1.1. mbq50t65fesc.pdf Size:1882K _update_igbt

MBQ50T65FDSC
MBQ50T65FDSC

 MBQ50T65FESC 650V Field Stop IGBT General Description Features  High Speed Switching & Low Power Loss This IGBT is produced using advanced MagnaChip’s Field  V = 1.85V @ I = 50A CE(sat) C Stop Trench IGBT Technology, which provides high switching  E = 0.55mJ @ T = 25°C off C series and excellent quality.  High Input Impedance  t = 80ns (typ.) @di /dt

1.2. mbq50t65fdsc.pdf Size:1388K _update_igbt

MBQ50T65FDSC
MBQ50T65FDSC

 MBQ50T65FDSC 650V Field Stop IGBT General Description Features  High Speed Switching & Low Power Loss This IGBT is produced using advanced MagnaChip’s Field  V = 1.95V @ I = 50A CE(sat) C Stop Trench IGBT Technology, which provides high switching  Eoff = 0.37mJ @ TC = 25°C series and excellent quality.  High Input Impedance  t = 80ns (typ.) @di /dt = 1

 

Otros transistores... MBQ40T120FES , GT40RR21 , MBQ50T65FESC , MBQ60T65PES , JNG25N120HS , SSG60N60N , PDMB100E6 , SL40N60FL , IXGR48N60C3D1 , STGW38IH120D , FGH75T65UPD , STGB7NC60KD , STGF7NC60KD , STGP7NC60KD , , , .

 

 
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IGBT: STGP7NC60KD | STGF7NC60KD | STGB7NC60KD | FGH75T65UPD | STGW38IH120D | MBQ50T65FDSC | SL40N60FL | PDMB100E6 | SSG60N60N | JNG25N120HS |

 

 

 
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