All IGBT. MBQ50T65FDSC Datasheet

 

MBQ50T65FDSC IGBT. Datasheet pdf. Equivalent

Type Designator: MBQ50T65FDSC

Marking Code: 50T65FDSC

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 273

Maximum Collector-Emitter Voltage |Vce|, V: 650

Collector-Emitter saturation Voltage |Vcesat|, V: 1.95

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 100

Maximum Junction Temperature (Tj), °C: 175

Rise Time, nS: 60

Maximum Collector Capacity (Cc), pF: 238

Package: TO247

MBQ50T65FDSC Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

MBQ50T65FDSC Datasheet (PDF)

1.1. mbq50t65fesc.pdf Size:1882K _update_igbt

MBQ50T65FDSC MBQ50T65FDSC

 MBQ50T65FESC 650V Field Stop IGBT General Description Features  High Speed Switching & Low Power Loss This IGBT is produced using advanced MagnaChip’s Field  V = 1.85V @ I = 50A CE(sat) C Stop Trench IGBT Technology, which provides high switching  E = 0.55mJ @ T = 25°C off C series and excellent quality.  High Input Impedance  t = 80ns (typ.) @di /dt

1.2. mbq50t65fdsc.pdf Size:1388K _update_igbt

MBQ50T65FDSC MBQ50T65FDSC

 MBQ50T65FDSC 650V Field Stop IGBT General Description Features  High Speed Switching & Low Power Loss This IGBT is produced using advanced MagnaChip’s Field  V = 1.95V @ I = 50A CE(sat) C Stop Trench IGBT Technology, which provides high switching  Eoff = 0.37mJ @ TC = 25°C series and excellent quality.  High Input Impedance  t = 80ns (typ.) @di /dt = 1

 

Datasheet: MBQ40T120FES , GT40RR21 , MBQ50T65FESC , MBQ60T65PES , JNG25N120HS , SSG60N60N , PDMB100E6 , SL40N60FL , IXGR48N60C3D1 , STGW38IH120D , FGH75T65UPD , STGB7NC60KD , STGF7NC60KD , STGP7NC60KD , AOT15B65M1 , AOB15B65M1 , GT60M104 .

 

 
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