MBQ50T65FDSC Datasheet and Replacement
Type Designator: MBQ50T65FDSC
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 273 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 100 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 60 nS
Coesⓘ - Output Capacitance, typ: 238 pF
Package: TO247
MBQ50T65FDSC substitution
MBQ50T65FDSC Datasheet (PDF)
mbq50t65fdsc.pdf

MBQ50T65FDSC 650V Field Stop IGBT General Description Features High Speed Switching & Low Power Loss This IGBT is produced using advanced MagnaChips Field V = 1.95V @ I = 50A CE(sat) C Stop Trench IGBT Technology, which provides high switching Eoff = 0.37mJ @ TC = 25C series and excellent quality. High Input Impedance t = 80ns (typ.) @di /dt = 1
mbq50t65fesc.pdf

MBQ50T65FESC 650V Field Stop IGBTGeneral Description Features High Speed Switching & Low Power Loss This IGBT is produced using advanced MagnaChips Field V = 1.85V @ I = 50A CE(sat) C Stop Trench IGBT Technology, which provides high switching E = 0.55mJ @ T = 25C off C series and excellent quality. High Input Impedance t = 80ns (typ.) @di /dt
Datasheet: MBQ40T120FES , GT40RR21 , MBQ50T65FESC , MBQ60T65PES , JNG25N120HS , SSG60N60N , PDMB100E6 , SL40N60FL , IRGP4063 , STGW38IH120D , FGH75T65UPD , STGB7NC60KD , STGF7NC60KD , STGP7NC60KD , AOT15B65M1 , AOB15B65M1 , GT60M104 .
History: HGTG30N60A4
Keywords - MBQ50T65FDSC transistor datasheet
MBQ50T65FDSC cross reference
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History: HGTG30N60A4



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