IRG4BC10S Todos los transistores

 

IRG4BC10S IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRG4BC10S
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 38 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 14 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.58 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 28 nS
   Coesⓘ - Capacitancia de salida, typ: 30 pF
   Paquete / Cubierta: TO220AB
 

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Principales características: IRG4BC10S

 ..1. Size:267K  international rectifier
 irg4bc10s.pdf pdf_icon

IRG4BC10S

PD - 91786B IRG4BC10S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Extremely low voltage drop; 1.1V typical at 2A S-Speed Minimizes power dissipation at up to 3 VCES = 600V KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives, up to 2KHz in VCE(on) typ. = 1.10V Chopper Applications G Very Tight Vce(on) distribution Indust

 0.1. Size:220K  international rectifier
 irg4bc10sd-l.pdf pdf_icon

IRG4BC10S

PD - 94255 IRG4BC10SD-S IRG4BC10SD-L INSULATED GATE BIPOLAR TRANSISTOR WITH Standard Speed ULTRAFAST SOFT RECOVERY DIODE CoPack IGBT Features C Extremely low voltage drop 1.1Vtyp. @ 2A S-Series Minimizes power dissipation at up to 3 VCES = 600V KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives. VCE(on) typ. = 1.10V Very Tight Vce(on) distrib

 0.2. Size:220K  international rectifier
 irg4bc10sd-s.pdf pdf_icon

IRG4BC10S

PD - 94255 IRG4BC10SD-S IRG4BC10SD-L INSULATED GATE BIPOLAR TRANSISTOR WITH Standard Speed ULTRAFAST SOFT RECOVERY DIODE CoPack IGBT Features C Extremely low voltage drop 1.1Vtyp. @ 2A S-Series Minimizes power dissipation at up to 3 VCES = 600V KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives. VCE(on) typ. = 1.10V Very Tight Vce(on) distrib

 0.3. Size:314K  international rectifier
 irg4bc10sd.pdf pdf_icon

IRG4BC10S

PD -91784B IRG4BC10SD Standard Speed CoPack INSULATED GATE BIPOLAR TRANSISTOR WITH IGBT ULTRAFAST SOFT RECOVERY DIODE C Features Extremely low voltage drop 1.1Vtyp. @ 2A VCES = 600V S-Series Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives. VCE(on) typ. = 1.10V Very Tight Vce(on) distribution G IGB

MOSTRAR MÁS

Otros transistores... HGTP7N60A4 , HGTP7N60A4D , HGTP7N60B3 , HGTP7N60B3D , HGTP7N60C3 , HGTP7N60C3D , IRG4BC10K , IRG4BC10KD , FGH75T65UPD , IRG4BC10SD , IRG4BC10UD , IRG4BC20F , IRG4BC20FD , IRG4BC20K , IRG4BC20KD , IRG4BC20KD-S , IRG4BC20K-S .

 

 
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