IRG4BC10S Даташит. Аналоги. Параметры и характеристики.
Наименование: IRG4BC10S
Тип транзистора: IGBT
Тип управляющего канала: N
Pc ⓘ - Максимальная рассеиваемая мощность: 38 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 14 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.58 V @25℃
Tj ⓘ - Максимальная температура перехода: 150 ℃
tr ⓘ - Время нарастания типовое: 28 nS
Coesⓘ - Выходная емкость, типовая: 30 pF
Тип корпуса: TO220AB
Аналог (замена) для IRG4BC10S
IRG4BC10S Datasheet (PDF)
irg4bc10s.pdf

PD - 91786BIRG4BC10S Standard Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeaturesC Extremely low voltage drop; 1.1V typical at 2A S-Speed: Minimizes power dissipation at up to 3 VCES = 600V KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives, up to 2KHz inVCE(on) typ. = 1.10V Chopper Applications G Very Tight Vce(on) distribution Indust
irg4bc10sd-l.pdf

PD - 94255IRG4BC10SD-SIRG4BC10SD-LINSULATED GATE BIPOLAR TRANSISTOR WITH Standard SpeedULTRAFAST SOFT RECOVERY DIODECoPack IGBTFeaturesC Extremely low voltage drop 1.1Vtyp. @ 2A S-Series: Minimizes power dissipation at up to 3VCES = 600V KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives.VCE(on) typ. = 1.10V Very Tight Vce(on) distrib
irg4bc10sd-s.pdf

PD - 94255IRG4BC10SD-SIRG4BC10SD-LINSULATED GATE BIPOLAR TRANSISTOR WITH Standard SpeedULTRAFAST SOFT RECOVERY DIODECoPack IGBTFeaturesC Extremely low voltage drop 1.1Vtyp. @ 2A S-Series: Minimizes power dissipation at up to 3VCES = 600V KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives.VCE(on) typ. = 1.10V Very Tight Vce(on) distrib
irg4bc10sd.pdf

PD -91784BIRG4BC10SD Standard Speed CoPackINSULATED GATE BIPOLAR TRANSISTOR WITHIGBTULTRAFAST SOFT RECOVERY DIODECFeatures Extremely low voltage drop 1.1Vtyp. @ 2AVCES = 600V S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives.VCE(on) typ. = 1.10V Very Tight Vce(on) distribution G IGB
Другие IGBT... HGTP7N60A4 , HGTP7N60A4D , HGTP7N60B3 , HGTP7N60B3D , HGTP7N60C3 , HGTP7N60C3D , IRG4BC10K , IRG4BC10KD , TGAN20N135FD , IRG4BC10SD , IRG4BC10UD , IRG4BC20F , IRG4BC20FD , IRG4BC20K , IRG4BC20KD , IRG4BC20KD-S , IRG4BC20K-S .
History: JT450N120F2MH1E | IXGA12N60B | IGU04N60T
History: JT450N120F2MH1E | IXGA12N60B | IGU04N60T



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