All IGBT. IRG4BC10S Datasheet

 

IRG4BC10S Datasheet and Replacement


   Type Designator: IRG4BC10S
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 38 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 14 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.58 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 28 nS
   Coesⓘ - Output Capacitance, typ: 30 pF
   Package: TO220AB
      - IGBT Cross-Reference

 

IRG4BC10S Datasheet (PDF)

 ..1. Size:267K  international rectifier
irg4bc10s.pdf pdf_icon

IRG4BC10S

PD - 91786BIRG4BC10S Standard Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeaturesC Extremely low voltage drop; 1.1V typical at 2A S-Speed: Minimizes power dissipation at up to 3 VCES = 600V KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives, up to 2KHz inVCE(on) typ. = 1.10V Chopper Applications G Very Tight Vce(on) distribution Indust

 0.1. Size:220K  international rectifier
irg4bc10sd-l.pdf pdf_icon

IRG4BC10S

PD - 94255IRG4BC10SD-SIRG4BC10SD-LINSULATED GATE BIPOLAR TRANSISTOR WITH Standard SpeedULTRAFAST SOFT RECOVERY DIODECoPack IGBTFeaturesC Extremely low voltage drop 1.1Vtyp. @ 2A S-Series: Minimizes power dissipation at up to 3VCES = 600V KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives.VCE(on) typ. = 1.10V Very Tight Vce(on) distrib

 0.2. Size:220K  international rectifier
irg4bc10sd-s.pdf pdf_icon

IRG4BC10S

PD - 94255IRG4BC10SD-SIRG4BC10SD-LINSULATED GATE BIPOLAR TRANSISTOR WITH Standard SpeedULTRAFAST SOFT RECOVERY DIODECoPack IGBTFeaturesC Extremely low voltage drop 1.1Vtyp. @ 2A S-Series: Minimizes power dissipation at up to 3VCES = 600V KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives.VCE(on) typ. = 1.10V Very Tight Vce(on) distrib

 0.3. Size:314K  international rectifier
irg4bc10sd.pdf pdf_icon

IRG4BC10S

PD -91784BIRG4BC10SD Standard Speed CoPackINSULATED GATE BIPOLAR TRANSISTOR WITHIGBTULTRAFAST SOFT RECOVERY DIODECFeatures Extremely low voltage drop 1.1Vtyp. @ 2AVCES = 600V S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives.VCE(on) typ. = 1.10V Very Tight Vce(on) distribution G IGB

Datasheet: HGTP7N60A4 , HGTP7N60A4D , HGTP7N60B3 , HGTP7N60B3D , HGTP7N60C3 , HGTP7N60C3D , IRG4BC10K , IRG4BC10KD , IRGP4066D , IRG4BC10SD , IRG4BC10UD , IRG4BC20F , IRG4BC20FD , IRG4BC20K , IRG4BC20KD , IRG4BC20KD-S , IRG4BC20K-S .

History: APT50GN120L2DQ2G | CM1400DU-24NF | TT050K065FQ | CRG15T120BK3SD | MMG100SR120DE | IKW50N65F5 | JNG75T65HYU2

Keywords - IRG4BC10S transistor datasheet

 IRG4BC10S cross reference
 IRG4BC10S equivalent finder
 IRG4BC10S lookup
 IRG4BC10S substitution
 IRG4BC10S replacement

 

 
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