IRG4BC20KD-S - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRG4BC20KD-S
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 60 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 16 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.27 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 34 nS
Coesⓘ - Capacitancia de salida, typ: 61 pF
Qgⓘ - Carga total de la puerta, typ: 34 nC
Paquete / Cubierta: D2PAK
Búsqueda de reemplazo de IRG4BC20KD-S - IGBT
IRG4BC20KD-S Datasheet (PDF)
irg4bc20kd-s.pdf
PD -91598AIRG4BC20KD-SINSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit RatedULTRAFAST SOFT RECOVERY DIODE UltraFast IGBTFeaturesFeaturesFeaturesFeaturesFeaturesC Short Circuit Rated UltraFast: Optimized forVCES = 600V high operating frequencies >5.0 kHz , and Short Circuit Rated to 10s @ 125C, VGE = 15V Generation 4 IGBT design provides tighterVCE(on)
irg4bc20kd.pdf
PD -91599AIRG4BC20KDINSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit RatedULTRAFAST SOFT RECOVERY DIODEUltraFast IGBTFeaturesFeaturesFeaturesFeaturesFeaturesC Short Circuit Rated UltraFast: Optimized forVCES = 600V high operating frequencies >5.0 kHz , and Short Circuit Rated to 10s @ 125C, VGE = 15V Generation 4 IGBT design provides tighterVCE(on
irg4bc20kdpbf.pdf
IRG4BC20KDPbFINSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit RatedULTRAFAST SOFT RECOVERY DIODEUltraFast IGBTFeaturesC GE =
irg4bc20k.pdf
D I Short Circuit RatedI T D T I T I T UltraFast IGBTFeaturesFeaturesFeaturesFeaturesFeaturesC High short circuit rating optimized for motor control,VCES = 600V tsc =10s, @360V VCE (start), TJ = 125C, VGE = 15V Combines low conduction losses with highVCE(on) typ. = 2.27V switching speedG Latest generation design
irg4bc20k-s.pdf
D I Short Circuit RatedI T D T I T I T UltraFast IGBTFeaturesFeaturesFeaturesFeaturesFeaturesC High short circuit rating optimized for motor control, tsc =10s, @360V VCE (start), TJ = 125C, VCES = 600V VGE = 15V Combines low conduction losses with highVCE(on) typ. = 2.27V switching speedG Latest generation desig
Otros transistores... IRG4BC10KD , IRG4BC10S , IRG4BC10SD , IRG4BC10UD , IRG4BC20F , IRG4BC20FD , IRG4BC20K , IRG4BC20KD , STGB10NB37LZ , IRG4BC20K-S , IRG4BC20S , IRG4BC20SD , IRG4BC20SD-S , IRG4BC20U , IRG4BC20UD , IRG4BC20W , IRG4BC30F .
Liste
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