All IGBT. IRG4BC20KD-S Datasheet

 

IRG4BC20KD-S Datasheet and Replacement


   Type Designator: IRG4BC20KD-S
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 60 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 16 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.27 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 34 nS
   Coesⓘ - Output Capacitance, typ: 61 pF
   Qgⓘ - Total Gate Charge, typ: 34 nC
   Package: D2PAK
      - IGBT Cross-Reference

 

IRG4BC20KD-S Datasheet (PDF)

 ..1. Size:222K  international rectifier
 irg4bc20kd-s.pdf pdf_icon

IRG4BC20KD-S

PD -91598AIRG4BC20KD-SINSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit RatedULTRAFAST SOFT RECOVERY DIODE UltraFast IGBTFeaturesFeaturesFeaturesFeaturesFeaturesC Short Circuit Rated UltraFast: Optimized forVCES = 600V high operating frequencies >5.0 kHz , and Short Circuit Rated to 10s @ 125C, VGE = 15V Generation 4 IGBT design provides tighterVCE(on)

 4.1. Size:315K  international rectifier
 irg4bc20kdpbf.pdf pdf_icon

IRG4BC20KD-S

IRG4BC20KDPbFINSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit RatedULTRAFAST SOFT RECOVERY DIODEUltraFast IGBTFeaturesC GE =

 4.2. Size:202K  international rectifier
 irg4bc20kd.pdf pdf_icon

IRG4BC20KD-S

PD -91599AIRG4BC20KDINSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit RatedULTRAFAST SOFT RECOVERY DIODEUltraFast IGBTFeaturesFeaturesFeaturesFeaturesFeaturesC Short Circuit Rated UltraFast: Optimized forVCES = 600V high operating frequencies >5.0 kHz , and Short Circuit Rated to 10s @ 125C, VGE = 15V Generation 4 IGBT design provides tighterVCE(on

 5.1. Size:141K  international rectifier
 irg4bc20k.pdf pdf_icon

IRG4BC20KD-S

D I Short Circuit RatedI T D T I T I T UltraFast IGBTFeaturesFeaturesFeaturesFeaturesFeaturesC High short circuit rating optimized for motor control,VCES = 600V tsc =10s, @360V VCE (start), TJ = 125C, VGE = 15V Combines low conduction losses with highVCE(on) typ. = 2.27V switching speedG Latest generation design

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Datasheet: IRG4BC10KD , IRG4BC10S , IRG4BC10SD , IRG4BC10UD , IRG4BC20F , IRG4BC20FD , IRG4BC20K , IRG4BC20KD , IRG4PC50U , IRG4BC20K-S , IRG4BC20S , IRG4BC20SD , IRG4BC20SD-S , IRG4BC20U , IRG4BC20UD , IRG4BC20W , IRG4BC30F .

History: FF1200R17KE3_B2 | SPT25N120F1A1T8TL

Keywords - IRG4BC20KD-S transistor datasheet

 IRG4BC20KD-S cross reference
 IRG4BC20KD-S equivalent finder
 IRG4BC20KD-S lookup
 IRG4BC20KD-S substitution
 IRG4BC20KD-S replacement

 

 
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