BM63764S-VC - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BM63764S-VC
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 41
Tensión máxima colector-emisor |Vce|, V: 600
Colector de Corriente Continua a 25℃ |Ic|, A: 15
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.7
Temperatura máxima de unión (Tj), ℃: 150
Paquete / Cubierta: MODULE
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BM63764S-VC Datasheet (PDF)
bm63764s-va bm63764s-vc.pdf
DatasheetInverter for motor control 600V IGBT Intelligent Power Module (IPM) for high speed switching drive BM63764S-VA BM63764S-VC General Description Key Specifications BM63764S-VA /-VC is an Intelligent Power Module IGBT Collector-Emitter Voltage VCESAT: 1.7V(Typ) composed of gate drivers, bootstrap diodes, IGBTs, fly FWD Forward Voltage VF: 1.5V(Typ) wheel diodes. Sm
bm63763s-va bm63763s-vc.pdf
DatasheetInverter for motor control 600V IGBT Intelligent Power Module (IPM) for high speed switching drive BM63763S-VA BM63763S-VC General Description Key Specifications BM63763S-VA/-VC is an Intelligent Power Module IGBT Collector-Emitter Voltage VCESAT: 1.7V(Typ) composed of gate drivers, bootstrap diodes, IGBTs, fly FWD Forward Voltage VF: 1.5V(Typ) wheel diodes. Sma
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