BM63764S-VC IGBT. Datasheet pdf. Equivalent
Type Designator: BM63764S-VC
Type: IGBT + Anti-Parallel Diode + Built-in Zener Diodes
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 41 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Ic|ⓘ - Maximum Collector Current: 15 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
Package: MODULE
BM63764S-VC Transistor Equivalent Substitute - IGBT Cross-Reference Search
BM63764S-VC Datasheet (PDF)
bm63764s-va bm63764s-vc.pdf
DatasheetInverter for motor control 600V IGBT Intelligent Power Module (IPM) for high speed switching drive BM63764S-VA BM63764S-VC General Description Key Specifications BM63764S-VA /-VC is an Intelligent Power Module IGBT Collector-Emitter Voltage VCESAT: 1.7V(Typ) composed of gate drivers, bootstrap diodes, IGBTs, fly FWD Forward Voltage VF: 1.5V(Typ) wheel diodes. Sm
bm63763s-va bm63763s-vc.pdf
DatasheetInverter for motor control 600V IGBT Intelligent Power Module (IPM) for high speed switching drive BM63763S-VA BM63763S-VC General Description Key Specifications BM63763S-VA/-VC is an Intelligent Power Module IGBT Collector-Emitter Voltage VCESAT: 1.7V(Typ) composed of gate drivers, bootstrap diodes, IGBTs, fly FWD Forward Voltage VF: 1.5V(Typ) wheel diodes. Sma
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