CM1200HA-66H - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CM1200HA-66H
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 10400 W
|Vce|ⓘ - Tensión máxima colector-emisor: 3300 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 1200 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 4.4 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 7.5 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 2000 nS
Coesⓘ - Capacitancia de salida, typ: 12000 pF
Qgⓘ - Carga total de la puerta, typ: 5700 nC
Paquete / Cubierta: MODULE
Búsqueda de reemplazo de CM1200HA-66H - IGBT
CM1200HA-66H Datasheet (PDF)
cm1200ha-66h.pdf
MITSUBISHI HVIGBT MODULESCM1200HA-66HHIGH POWER SWITCHING USEHVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM1200HA-66H IC................................................................ 1200A VCES ....................................................... 3300V Insulated Type 1-element in a packAPPLICATIONInverters, Converters, DC choppers, Ind
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cm1200hb-66h.pdf
MITSUBISHI HVIGBT MODULESCM1200HB-66HHIGH POWER SWITCHING USE2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM1200HB-66H IC................................................................ 1200A VCES ....................................................... 3300V Insulated Type 1-element in a packAPPLICATIONInverters, Converters, DC c
cm1200hc-50h.pdf
MITSUBISHI HVIGBT MODULESCM1200HC-50HHIGH POWER SWITCHING USE3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM1200HC-50H IC ................................................................ 1200A VCES ....................................................... 2500V Insulated Type 1-element in a Pack AISiC BaseplateAPPLICATIONTraction
cm1200hc-66h.pdf
MITSUBISHI HVIGBT MODULESCM1200HC-66HHIGH POWER SWITCHING USE3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM1200HC-66H IC ................................................................ 1200A VCES ....................................................... 3300V Insulated Type 1-element in a Pack AISiC BaseplateAPPLICATIONTraction
cm1200hg-66h.pdf
MITSUBISHI HVIGBT MODULESCM1200HG-66HHIGH POWER SWITCHING USE3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM1200HG-66H IC ............................................................... 1200 A VCES ...................................................... 3300 V High Insulated Type 1-element in a Pack AISiC BaseplateA
cm1200hc-34h.pdf
MITSUBISHI HVIGBT MODULESCM1200HC-34HHIGH POWER SWITCHING USE3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM1200HC-34H IC ................................................................ 1200A VCES ....................................................... 1700V Insulated Type 1-element in a Pack AISiC Baseplate Soft Reverse Recover
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2