CM1200HA-66H IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CM1200HA-66H
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 10400
W
|Vce|ⓘ - Tensión máxima colector-emisor: 3300
V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20
V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 1200
A
|VCEsat|ⓘ -
Voltaje de saturación colector-emisor, typ: 4.4
V @25℃
Tjⓘ -
Temperatura máxima de unión: 150
℃
trⓘ - Tiempo de subida, typ: 2000
nS
Coesⓘ - Capacitancia de salida, typ: 12000
pF
Paquete / Cubierta: MODULE
Búsqueda de reemplazo de CM1200HA-66H IGBT
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CM1200HA-66H PDF specs
..1. Size:44K 1
cm1200ha-66h.pdf 

MITSUBISHI HVIGBT MODULES CM1200HA-66H HIGH POWER SWITCHING USE HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM1200HA-66H IC................................................................ 1200A VCES ....................................................... 3300V Insulated Type 1-element in a pack APPLICATION Inverters, Converters, DC choppers, Ind... See More ⇒
7.2. Size:50K 1
cm1200hb-66h.pdf 

MITSUBISHI HVIGBT MODULES CM1200HB-66H HIGH POWER SWITCHING USE 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM1200HB-66H IC................................................................ 1200A VCES ....................................................... 3300V Insulated Type 1-element in a pack APPLICATION Inverters, Converters, DC c... See More ⇒
7.3. Size:71K 1
cm1200hc-50h.pdf 

MITSUBISHI HVIGBT MODULES CM1200HC-50H HIGH POWER SWITCHING USE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM1200HC-50H IC ................................................................ 1200A VCES ....................................................... 2500V Insulated Type 1-element in a Pack AISiC Baseplate APPLICATION Traction... See More ⇒
7.4. Size:183K 1
cm1200hc-66h.pdf 

MITSUBISHI HVIGBT MODULES CM1200HC-66H HIGH POWER SWITCHING USE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM1200HC-66H IC ................................................................ 1200A VCES ....................................................... 3300V Insulated Type 1-element in a Pack AISiC Baseplate APPLICATION Traction... See More ⇒
7.6. Size:203K 1
cm1200hg-66h.pdf 

MITSUBISHI HVIGBT MODULES CM1200HG-66H HIGH POWER SWITCHING USE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM1200HG-66H IC ............................................................... 1200 A VCES ...................................................... 3300 V High Insulated Type 1-element in a Pack AISiC Baseplate A... See More ⇒
7.7. Size:179K 1
cm1200hc-34h.pdf 

MITSUBISHI HVIGBT MODULES CM1200HC-34H HIGH POWER SWITCHING USE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM1200HC-34H IC ................................................................ 1200A VCES ....................................................... 1700V Insulated Type 1-element in a Pack AISiC Baseplate Soft Reverse Recover... See More ⇒
Otros transistores... CM100TX-24S
, CM100TX-24S1
, CM10MD-24H
, CM1200DB-34N
, CM1200DC-34N
, CM1200E4C-34N
, CM1200HA-34H
, CM1200HA-50H
, IKW50N60T
, CM1200HB-50H
, CM1200HB-66H
, CM1200HC-34H
, CM1200HC-50H
, CM1200HC-66H
, CM1200HCB-34N
, CM1200HG-66H
, CM1400DU-24NF
.
History: BSM10GD120DN2
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