CM1200HA-66H Datasheet and Replacement
Type Designator: CM1200HA-66H
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 10400 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 3300 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 1200 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4.4 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 7.5 V
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 2000 nS
Coesⓘ - Output Capacitance, typ: 12000 pF
Qg ⓘ - Total Gate Charge, typ: 5700 nC
Package: MODULE
CM1200HA-66H substitution
CM1200HA-66H Datasheet (PDF)
cm1200ha-66h.pdf
MITSUBISHI HVIGBT MODULESCM1200HA-66HHIGH POWER SWITCHING USEHVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM1200HA-66H IC................................................................ 1200A VCES ....................................................... 3300V Insulated Type 1-element in a packAPPLICATIONInverters, Converters, DC choppers, Ind
cm1200hcb-34n.pdf
CM1200HCB-34N HIGH POWER SWITHCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules CM2400HCB-34N IC 1200 A VCES
Datasheet: CM100TX-24S , CM100TX-24S1 , CM10MD-24H , CM1200DB-34N , CM1200DC-34N , CM1200E4C-34N , CM1200HA-34H , CM1200HA-50H , MBQ50T65FDSC , CM1200HB-50H , CM1200HB-66H , CM1200HC-34H , CM1200HC-50H , CM1200HC-66H , CM1200HCB-34N , CM1200HG-66H , CM1400DU-24NF .
History: MP6750 | IQAB75N60A1 | BT50T60ANFK
Keywords - CM1200HA-66H transistor datasheet
CM1200HA-66H cross reference
CM1200HA-66H equivalent finder
CM1200HA-66H lookup
CM1200HA-66H substitution
CM1200HA-66H replacement
History: MP6750 | IQAB75N60A1 | BT50T60ANFK
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