All IGBT. CM1200HA-66H Datasheet

 

CM1200HA-66H Datasheet and Replacement


   Type Designator: CM1200HA-66H
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 10400 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 3300 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 1200 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4.4 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 2000 nS
   Coesⓘ - Output Capacitance, typ: 12000 pF
   Qgⓘ - Total Gate Charge, typ: 5700 nC
   Package: MODULE
      - IGBT Cross-Reference

 

CM1200HA-66H Datasheet (PDF)

 ..1. Size:44K  1
 cm1200ha-66h.pdf pdf_icon

CM1200HA-66H

MITSUBISHI HVIGBT MODULESCM1200HA-66HHIGH POWER SWITCHING USEHVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM1200HA-66H IC................................................................ 1200A VCES ....................................................... 3300V Insulated Type 1-element in a packAPPLICATIONInverters, Converters, DC choppers, Ind

 5.1. Size:150K  1
 cm1200ha-50h.pdf pdf_icon

CM1200HA-66H

 5.2. Size:101K  1
 cm1200ha-34h.pdf pdf_icon

CM1200HA-66H

 7.1. Size:446K  1
 cm1200hcb-34n.pdf pdf_icon

CM1200HA-66H

CM1200HCB-34N HIGH POWER SWITHCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules CM2400HCB-34N IC 1200 A VCES

SHOW MORE

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: OST60N65HEMF | SKM150GAL12T4

Keywords - CM1200HA-66H transistor datasheet

 CM1200HA-66H cross reference
 CM1200HA-66H equivalent finder
 CM1200HA-66H lookup
 CM1200HA-66H substitution
 CM1200HA-66H replacement

 

 
Back to Top

 


 
.