CM200DY-12NF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CM200DY-12NF
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 650 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 200 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 120 nS
Coesⓘ - Capacitancia de salida, typ: 3700 pF
Paquete / Cubierta: MODULE
Búsqueda de reemplazo de CM200DY-12NF IGBT
CM200DY-12NF Datasheet (PDF)
cm200dy-12nf.pdf

CM200DY-12NFPowerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Dual IGBTMODNF-Series Module200 Amperes/600 VoltsTC MEASURED POINT(BASEPLATE)AF FE EG2E2 GBJN HC2E1 E2 C1 E1G1 GDescription:Powerex IGBTMOD ModulesK K Kare designed for use in switchingM NUTS LD(3 PLACES)(2 PLACES) applications. Each module co
cm200dy-12h.pdf

CM200DY-12HPowerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Dual IGBTMODH-Series Module200 Amperes/600 VoltsABH E E HSC2E1 E2 C1GC KSLDescription:R - M5 THD (3 TYP.)Powerex IGBTMOD ModulesP - DIA. (2 TYP.)are designed for use in switching.110 TABJ J Japplications. Each module consistsN Nof two IGBT Transistors
cm200dy-24h.pdf

MITSUBISHI IGBT MODULESCM200DY-24HHIGH POWER SWITCHING USEINSULATED TYPEABF F GPC2E1 E2 C1JC DPDescription:KMitsubishi IGBT Modules are de-RQ - M6 THDN - DIA. signed for use in switching applica-(3 TYP.)(4 TYP.)tions. Each module consists of twoTAB#110 t=0.5IGBTs in a half-bridge configurationMLwith each transistor having a re-Mverse-conne
cm200dy-28h.pdf

CM200DY-28HPowerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Dual IGBTMODH-Series Module200 Amperes/1400 VoltsABF F GPC2E1 E2 C1JC DPDescription:KPowerex IGBTMOD ModulesRQ - M6 THDN - DIA.are designed for use in switching(3 TYP.)(4 TYP.)applications. Each module consists.110 TABM of two IGBT Transistors in a
Otros transistores... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , CRG60T60AN3H , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
History: APT44GA60BD30
History: APT44GA60BD30



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