CM200DY-12NF PDF Specs and Replacement
Type Designator: CM200DY-12NF
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 650 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 200 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
tr ⓘ - Rise Time, typ: 120 nS
Coesⓘ - Output Capacitance, typ: 3700 pF
Package: MODULE
CM200DY-12NF Substitution
CM200DY-12NF PDF specs
cm200dy-12nf.pdf
CM200DY-12NF Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual IGBTMOD NF-Series Module 200 Amperes/600 Volts TC MEASURED POINT (BASEPLATE) A F F E E G2 E2 G B J N H C2E1 E2 C1 E1 G1 G Description Powerex IGBTMOD Modules K K K are designed for use in switching M NUTS L D (3 PLACES) (2 PLACES) applications. Each module co... See More ⇒
cm200dy-12h.pdf
CM200DY-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual IGBTMOD H-Series Module 200 Amperes/600 Volts A B H E E H S C2E1 E2 C1 G C K S L Description R - M5 THD (3 TYP.) Powerex IGBTMOD Modules P - DIA. (2 TYP.) are designed for use in switching .110 TAB J J J applications. Each module consists N N of two IGBT Transistors... See More ⇒
cm200dy-24h.pdf
MITSUBISHI IGBT MODULES CM200DY-24H HIGH POWER SWITCHING USE INSULATED TYPE A B F F G P C2E1 E2 C1 J C D P Description K Mitsubishi IGBT Modules are de- R Q - M6 THD N - DIA. signed for use in switching applica- (3 TYP.) (4 TYP.) tions. Each module consists of two TAB#110 t=0.5 IGBTs in a half-bridge configuration M L with each transistor having a re- M verse-conne... See More ⇒
cm200dy-28h.pdf
CM200DY-28H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual IGBTMOD H-Series Module 200 Amperes/1400 Volts A B F F G P C2E1 E2 C1 J C D P Description K Powerex IGBTMOD Modules R Q - M6 THD N - DIA. are designed for use in switching (3 TYP.) (4 TYP.) applications. Each module consists .110 TAB M of two IGBT Transistors in a ... See More ⇒
Specs: CM1800HCB-34N , CM200DU-12F , CM200DU-12NFH , CM200DU-24F , CM200DU-24NFH , CM200DX-24S , CM200DX-34SA , CM200DY-12H , XNF15N60T , CM200DY-24A , CM200DY-24H , CM200DY-24NF , CM200DY-28H , CM200E3U-24F , CM200EXS-24S , CM200EXS-34SA , CM200HG-130H .
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