CM400DY-12NF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CM400DY-12NF
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 1130 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 400 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 200 nS
Coesⓘ - Capacitancia de salida, typ: 7300 pF
Paquete / Cubierta: MODULE
- Selección de transistores por parámetros
CM400DY-12NF Datasheet (PDF)
cm400dy-12h.pdf

MITSUBISHI IGBT MODULESCM400DY-12HHIGH POWER SWITCHING USEINSULATED TYPEABF F GPC2E1 E2 C1JC DPDescription:KMitsubishi IGBT Modules are de-RQ - M6 THDsigned for use in switching applica-N - DIA.(3 TYP.)(4 TYP.)tions. Each module consists of twoIGBTs in a half-bridge configurationTAB#110 t=0.5ML with each transistor having a re-Mverse-connect
cm400dy-66h.pdf

MITSUBISHI HVIGBT MODULESCM400DY-66HHIGH POWER SWITCHING USEHVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM400DY-66H IC...................................................................400A VCES ....................................................... 3300V Insulated Type 2-elements in a packAPPLICATIONInverters, Converters, DC choppers, Ind
Otros transistores... CM30MD-12H , CM35MXA-24S , CM400C1Y-24S , CM400DU-12NFH , CM400DU-24NFH , CM400DU-5F , CM400DX-12A , CM400DY-12H , IRG7R313U , CM400DY-24A , CM400DY-24NF , CM400DY-50H , CM400DY-66H , CM400HA-24A , CM400HA-24H , CM400HA-28H , CM400HB-90H .
History: DM2G100SH6N | DF160R12W2H3_B11 | 2MBI150L-120 | MMG300D170B | 2MBI150L-060 | IXGH40N120A2
History: DM2G100SH6N | DF160R12W2H3_B11 | 2MBI150L-120 | MMG300D170B | 2MBI150L-060 | IXGH40N120A2



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