CM400DY-12NF Datasheet and Replacement
Type Designator: CM400DY-12NF
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 1130 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 400 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 7.5 V
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 200 nS
Coesⓘ - Output Capacitance, typ: 7300 pF
Qg ⓘ - Total Gate Charge, typ: 1600 nC
Package: MODULE
CM400DY-12NF substitution
CM400DY-12NF Datasheet (PDF)
cm400dy-12h.pdf

MITSUBISHI IGBT MODULESCM400DY-12HHIGH POWER SWITCHING USEINSULATED TYPEABF F GPC2E1 E2 C1JC DPDescription:KMitsubishi IGBT Modules are de-RQ - M6 THDsigned for use in switching applica-N - DIA.(3 TYP.)(4 TYP.)tions. Each module consists of twoIGBTs in a half-bridge configurationTAB#110 t=0.5ML with each transistor having a re-Mverse-connect
cm400dy-66h.pdf

MITSUBISHI HVIGBT MODULESCM400DY-66HHIGH POWER SWITCHING USEHVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM400DY-66H IC...................................................................400A VCES ....................................................... 3300V Insulated Type 2-elements in a packAPPLICATIONInverters, Converters, DC choppers, Ind
Datasheet: CM30MD-12H , CM35MXA-24S , CM400C1Y-24S , CM400DU-12NFH , CM400DU-24NFH , CM400DU-5F , CM400DX-12A , CM400DY-12H , FGH60N60SFD , CM400DY-24A , CM400DY-24NF , CM400DY-50H , CM400DY-66H , CM400HA-24A , CM400HA-24H , CM400HA-28H , CM400HB-90H .
History: HGTP14N40F3VL
Keywords - CM400DY-12NF transistor datasheet
CM400DY-12NF cross reference
CM400DY-12NF equivalent finder
CM400DY-12NF lookup
CM400DY-12NF substitution
CM400DY-12NF replacement
History: HGTP14N40F3VL



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