IRG4PC50F Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRG4PC50F  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 200 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 70 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.45 V @25℃

trⓘ - Tiempo de subida, typ: 25 nS

Coesⓘ - Capacitancia de salida, typ: 250 pF

Encapsulados: TO247AC

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IRG4PC50F datasheet

 ..1. Size:152K  international rectifier
 irg4pc50f.pdf pdf_icon

IRG4PC50F

D I I T I T D T I T I T Features C Features Features Features Features Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter VCE(on) typ. = 1.45V G parameter distribution and higher efficiency than Generation 3 @VGE = 15V,

 0.1. Size:214K  international rectifier
 irg4pc50fd.pdf pdf_icon

IRG4PC50F

PD 91469B IRG4PC50FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features Fast Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). VCE(on) typ. = 1.45V Generation 4 IGBT design provides tighter G parameter distribution and high

 0.2. Size:323K  international rectifier
 irg4pc50f-e.pdf pdf_icon

IRG4PC50F

PD - 96168 IRG4PC50F-EPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter VCE(on) typ. = 1.45V G parameter distribution and higher efficiency than Generation 3 @VGE = 15V, IC = 39A E Industry standar

 0.3. Size:310K  international rectifier
 irg4pc50fpbf.pdf pdf_icon

IRG4PC50F

PD - 95398 IRG4PC50FPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter VCE(on) typ. = 1.45V G parameter distribution and higher efficiency than Generation 3 @VGE = 15V, IC = 39A E Industry standard

MOSTRAR MÁS

Otros transistores... IRG4PC40F, IRG4PC40FD, IRG4PC40K, IRG4PC40KD, IRG4PC40S, IRG4PC40U, IRG4PC40UD, IRG4PC40W, RJP30H2A, IRG4PC50FD, IRG4PC50K, IRG4PC50KD, IRG4PC50S, IRG4PC50U, IRG4PC50UD, IRG4PC50W, IRG4PF50W