Справочник IGBT. IRG4PC50F

 

IRG4PC50F - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: IRG4PC50F

Тип управляющего канала: N-Channel

Максимальная рассеиваемая мощность (Pc): 200W

Предельно-допустимое напряжение коллектор-эмиттер (Uce): 600V

Максимальный постоянный ток коллектора (Ic): 39A

Максимальная температура перехода (Tj): 175

Корпус: TO247AC

Аналог (замена) для IRG4PC50F

 

 

IRG4PC50F Datasheet (PDF)

1.1. irg4pc50f.pdf Size:146K _international_rectifier

IRG4PC50F
IRG4PC50F

D I I T I T D T I T I T Features C Features Features Features Features Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter VCE(on) typ. = 1.45V G parameter distribution and higher efficiency than Generation 3 @VGE = 15V, IC = 3

1.2. irg4pc50fd.pdf Size:211K _international_rectifier

IRG4PC50F
IRG4PC50F

PD 91469B IRG4PC50FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features Fast: Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). VCE(on) typ. = 1.45V Generation 4 IGBT design provides tighter G parameter distribution and higher effi

 1.3. irg4pc50f.pdf Size:152K _igbt_a

IRG4PC50F
IRG4PC50F

 D I I T I T D T I T I T Features C Features Features Features Features • Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter VCE(on) typ. = 1.45V G parameter distribution and higher efficiency than Generation 3 @VGE = 15V,

1.4. irg4pc50fd.pdf Size:214K _igbt_a

IRG4PC50F
IRG4PC50F

PD 91469B IRG4PC50FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features • Fast: Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). VCE(on) typ. = 1.45V • Generation 4 IGBT design provides tighter G parameter distribution and high

Другие IGBT... IRG4PC40F , IRG4PC40FD , IRG4PC40K , IRG4PC40KD , IRG4PC40S , IRG4PC40U , IRG4PC40UD , IRG4PC40W , RJP30H1DPP-M0 , IRG4PC50FD , IRG4PC50K , IRG4PC50KD , IRG4PC50S , IRG4PC50U , IRG4PC50UD , IRG4PC50W , IRG4PF50W .

 

 
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Обновления

IGBT: MBQ50T65FESC | GT40RR21 | MBQ40T120FES | GT20D201 | MGD633 | IKW30N65WR5 | 2PG001 | FGT612 | FGT412 | FGT313 |
 

 

 

 

 

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