IRG4PC50F Datasheet and Replacement, IGBT Equivalent Finder, Cross Reference. AllTransistors.com

IRG4PC50F Datasheet (PDF)

..1. Size:152K international rectifier
irg4pc50f.pdf pdf_icon

D I I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures Optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighterVCE(on) typ. = 1.45VG parameter distribution and higher efficiency than Generation 3@VGE = 15V,

0.1. Size:214K international rectifier
irg4pc50fd.pdf pdf_icon

PD 91469BIRG4PC50FD Fast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures Fast: Optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).VCE(on) typ. = 1.45V Generation 4 IGBT design provides tighterG parameter distribution and high

0.2. Size:323K international rectifier
irg4pc50f-e.pdf pdf_icon

PD - 96168IRG4PC50F-EPbFFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures C Optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighterVCE(on) typ. = 1.45VG parameter distribution and higher efficiency than Generation 3@VGE = 15V, IC = 39AE Industry standar

0.3. Size:310K international rectifier
irg4pc50fpbf.pdf pdf_icon

PD - 95398IRG4PC50FPbFFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures C Optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighterVCE(on) typ. = 1.45VG parameter distribution and higher efficiency than Generation 3@VGE = 15V, IC = 39AE Industry standard

Datasheet: IRG4PC40F , IRG4PC40FD , IRG4PC40K , IRG4PC40KD , IRG4PC40S , IRG4PC40U , IRG4PC40UD , IRG4PC40W , RJP30H1DPD , IRG4PC50FD , IRG4PC50K , IRG4PC50KD , IRG4PC50S , IRG4PC50U , IRG4PC50UD , IRG4PC50W , IRG4PF50W .