CM800HB-66H - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CM800HB-66H
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 10400 W
|Vce|ⓘ - Tensión máxima colector-emisor: 3300 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 800 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.8 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 2000 nS
Coesⓘ - Capacitancia de salida, typ: 12000 pF
Paquete / Cubierta: MODULE
- Selección de transistores por parámetros
CM800HB-66H Datasheet (PDF)
cm800hb-66h.pdf

MITSUBISHI HVIGBT MODULESCM800HB-66HHIGH POWER SWITCHING USE2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM800HB-66H IC...................................................................800A VCES ....................................................... 3300V Insulated Type 1-element in a packAPPLICATIONInverters, Converters, DC ch
cm800hb-50h.pdf

MITSUBISHI HVIGBT MODULESCM800HB-50HHIGH POWER SWITCHING USE2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM800HB-50H IC...................................................................800A VCES ....................................................... 2500V Insulated Type 1-element in a packAPPLICATIONInverters, Converters, DC ch
cm800hc-66h.pdf

MITSUBISHI HVIGBT MODULESCM800HC-66HHIGH POWER SWITCHING USE3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM800HC-66H IC ...................................................................800A VCES ....................................................... 3300V Insulated Type 1-element in a Pack AISiC BaseplateAPPLICATIONTraction
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: 7MBR75U2B060 | IRG7PH28UD1 | MMG150W060XB6EN | SKM195GAL062D | MG25Q2YS40 | SM2G200US60 | APT40GP90BG
History: 7MBR75U2B060 | IRG7PH28UD1 | MMG150W060XB6EN | SKM195GAL062D | MG25Q2YS40 | SM2G200US60 | APT40GP90BG



Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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