All IGBT. CM800HB-66H Datasheet

 

CM800HB-66H IGBT. Datasheet pdf. Equivalent


   Type Designator: CM800HB-66H
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 10400 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 3300 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 800 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.8 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 2000 nS
   Coesⓘ - Output Capacitance, typ: 12000 pF
   Qgⓘ - Total Gate Charge, typ: 5700 nC
   Package: MODULE

 CM800HB-66H Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

CM800HB-66H Datasheet (PDF)

 ..1. Size:47K  1
cm800hb-66h.pdf

CM800HB-66H
CM800HB-66H

MITSUBISHI HVIGBT MODULESCM800HB-66HHIGH POWER SWITCHING USE2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM800HB-66H IC...................................................................800A VCES ....................................................... 3300V Insulated Type 1-element in a packAPPLICATIONInverters, Converters, DC ch

 6.1. Size:47K  1
cm800hb-50h.pdf

CM800HB-66H
CM800HB-66H

MITSUBISHI HVIGBT MODULESCM800HB-50HHIGH POWER SWITCHING USE2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM800HB-50H IC...................................................................800A VCES ....................................................... 2500V Insulated Type 1-element in a packAPPLICATIONInverters, Converters, DC ch

 8.1. Size:109K  1
cm800ha-50h.pdf

CM800HB-66H
CM800HB-66H

 8.2. Size:178K  1
cm800hc-66h.pdf

CM800HB-66H
CM800HB-66H

MITSUBISHI HVIGBT MODULESCM800HC-66HHIGH POWER SWITCHING USE3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM800HC-66H IC ...................................................................800A VCES ....................................................... 3300V Insulated Type 1-element in a Pack AISiC BaseplateAPPLICATIONTraction

 8.3. Size:42K  1
cm800ha-66h.pdf

CM800HB-66H
CM800HB-66H

MITSUBISHI HVIGBT MODULESCM800HA-66HHIGH POWER SWITCHING USEHVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM800HA-66H IC...................................................................800A VCES ....................................................... 3300V Insulated Type 1-element in a packAPPLICATIONInverters, Converters, DC choppers, Indu

Datasheet: CM800DZ-34H , CM800DZB-34N , CM800E2C-66H , CM800E2Z-66H , CM800E6C-66H , CM800HA-50H , CM800HA-66H , CM800HB-50H , TGAN40N60FD , CM800HC-66H , CM900DUC-24S , CM900HB-90H , CM900HC-90H , CM900HG-90H , CMH1200DC-34S , DF1000R17IE4 , DF1000R17IE4D_B2 .

 

 
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