2PG352 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2PG352
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 15 W
|Vce|ⓘ - Tensión máxima colector-emisor: 400 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 16 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 5 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2(max) V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 35 nS
Coesⓘ - Capacitancia de salida, typ: 250 pF
Paquete / Cubierta: IPAK
- Selección de transistores por parámetros
2PG352 Datasheet (PDF)
2pg352.pdf

IGBTs 2PG3522PG352Insulated Gate Bipolar TransistorUnit : mm Features7.0 0.3 3.5 0.2 High breakdown voltage : VCES= 400V3.0 0.2 Large current control possible : IC(peak)=150A Housing in the surface mounting package possible Applications1.1 0.1 0.85 0.1 For camera flash-light 0.75 0.1 0.4 0.12.3 0.24.6 0.4 Absolute Maximum Ratings (Tc = 25C)1 2
2pg351.pdf

IGBTs 2PG3512PG351Insulated Gate Bipolar TransistorUnit : mm Features7.0 0.3 3.5 0.2 High breakdown voltage : VCES= 400V3.0 0.2 Large current control possible : IC(peak)=130A Housing in the surface mounting package possible Applications1.1 0.1 0.85 0.1 For camera flash-light 0.75 0.1 0.4 0.12.3 0.24.6 0.4 Absolute Maximum Ratings (Tc = 25C)1 2
Otros transistores... HCKW60N65BH2A , HCKW60N65CH2A , HCKW75N65BH2 , HCKW75N65FH2 , 2N6975 , 2N6976 , 2N6977 , 2N6978 , TGAN20N135FD , 2PG401 , 2PG402 , 2SH11 , 2SH12 , 2SH13 , 2SH14 , 2SH15 , 2SH16 .
History: F3L80R12W1H3_B11 | IXGH30N60B | IRG7PH35UD1M | NGTB50N120FL2WG | IRG4BC30UD | IKW50N65WR5 | MMG15CB120XB6TC
History: F3L80R12W1H3_B11 | IXGH30N60B | IRG7PH35UD1M | NGTB50N120FL2WG | IRG4BC30UD | IKW50N65WR5 | MMG15CB120XB6TC



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