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2PG352 Spec and Replacement


   Type Designator: 2PG352
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 15 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 16 V
   |Ic| ⓘ - Maximum Collector Current: 5 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2(max) V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 35 nS
   Coesⓘ - Output Capacitance, typ: 250 pF
   Package: IPAK

 2PG352 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

2PG352 specs

 ..1. Size:16K  panasonic
 2pg352.pdf pdf_icon

2PG352

IGBTs 2PG352 2PG352 Insulated Gate Bipolar Transistor Unit mm Features 7.0 0.3 3.5 0.2 High breakdown voltage VCES= 400V 3.0 0.2 Large current control possible IC(peak)=150A Housing in the surface mounting package possible Applications 1.1 0.1 0.85 0.1 For camera flash-light 0.75 0.1 0.4 0.1 2.3 0.2 4.6 0.4 Absolute Maximum Ratings (Tc = 25 C) 1 2... See More ⇒

 9.1. Size:25K  panasonic
 2pg351.pdf pdf_icon

2PG352

IGBTs 2PG351 2PG351 Insulated Gate Bipolar Transistor Unit mm Features 7.0 0.3 3.5 0.2 High breakdown voltage VCES= 400V 3.0 0.2 Large current control possible IC(peak)=130A Housing in the surface mounting package possible Applications 1.1 0.1 0.85 0.1 For camera flash-light 0.75 0.1 0.4 0.1 2.3 0.2 4.6 0.4 Absolute Maximum Ratings (Tc = 25 C) 1 2... See More ⇒

Specs: HCKW60N65BH2A , HCKW60N65CH2A , HCKW75N65BH2 , HCKW75N65FH2 , 2N6975 , 2N6976 , 2N6977 , 2N6978 , IKW50N60H3 , 2PG401 , 2PG402 , 2SH11 , 2SH12 , 2SH13 , 2SH14 , 2SH15 , 2SH16 .

History: 2PG401

Keywords - 2PG352 transistor spec

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