2PG352 Datasheet. Specs and Replacement
Type Designator: 2PG352 📄📄
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 15 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 16 V
|Ic| ⓘ - Maximum Collector Current: 5 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2(max) V @25℃
tr ⓘ - Rise Time, typ: 35 nS
Coesⓘ - Output Capacitance, typ: 250 pF
Package: IPAK
2PG352 Substitution - IGBTⓘ Cross-Reference Search
2PG352 datasheet
2pg352.pdf
IGBTs 2PG352 2PG352 Insulated Gate Bipolar Transistor Unit mm Features 7.0 0.3 3.5 0.2 High breakdown voltage VCES= 400V 3.0 0.2 Large current control possible IC(peak)=150A Housing in the surface mounting package possible Applications 1.1 0.1 0.85 0.1 For camera flash-light 0.75 0.1 0.4 0.1 2.3 0.2 4.6 0.4 Absolute Maximum Ratings (Tc = 25 C) 1 2... See More ⇒
2pg351.pdf
IGBTs 2PG351 2PG351 Insulated Gate Bipolar Transistor Unit mm Features 7.0 0.3 3.5 0.2 High breakdown voltage VCES= 400V 3.0 0.2 Large current control possible IC(peak)=130A Housing in the surface mounting package possible Applications 1.1 0.1 0.85 0.1 For camera flash-light 0.75 0.1 0.4 0.1 2.3 0.2 4.6 0.4 Absolute Maximum Ratings (Tc = 25 C) 1 2... See More ⇒
Specs: HCKW60N65BH2A, HCKW60N65CH2A, HCKW75N65BH2, HCKW75N65FH2, 2N6975, 2N6976, 2N6977, 2N6978, IKW50N60H3, 2PG401, 2PG402, 2SH11, 2SH12, 2SH13, 2SH14, 2SH15, 2SH16
Keywords - 2PG352 transistor spec
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History: 2PG401 | 2SH14 | 2SH11 | IKY75N120CS6 | 2N6977 | 2N6976 | 2PG402
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