2PG352 Datasheet and Replacement
Type Designator: 2PG352
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 15 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 16 V
|Ic|ⓘ - Maximum Collector Current: 5 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2(max) V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 35 nS
Coesⓘ - Output Capacitance, typ: 250 pF
Package: IPAK
- IGBT Cross-Reference
2PG352 Datasheet (PDF)
2pg352.pdf

IGBTs 2PG3522PG352Insulated Gate Bipolar TransistorUnit : mm Features7.0 0.3 3.5 0.2 High breakdown voltage : VCES= 400V3.0 0.2 Large current control possible : IC(peak)=150A Housing in the surface mounting package possible Applications1.1 0.1 0.85 0.1 For camera flash-light 0.75 0.1 0.4 0.12.3 0.24.6 0.4 Absolute Maximum Ratings (Tc = 25C)1 2
2pg351.pdf

IGBTs 2PG3512PG351Insulated Gate Bipolar TransistorUnit : mm Features7.0 0.3 3.5 0.2 High breakdown voltage : VCES= 400V3.0 0.2 Large current control possible : IC(peak)=130A Housing in the surface mounting package possible Applications1.1 0.1 0.85 0.1 For camera flash-light 0.75 0.1 0.4 0.12.3 0.24.6 0.4 Absolute Maximum Ratings (Tc = 25C)1 2
Datasheet: HCKW60N65BH2A , HCKW60N65CH2A , HCKW75N65BH2 , HCKW75N65FH2 , 2N6975 , 2N6976 , 2N6977 , 2N6978 , TGAN20N135FD , 2PG401 , 2PG402 , 2SH11 , 2SH12 , 2SH13 , 2SH14 , 2SH15 , 2SH16 .
History: FF1200R17KE3_B2 | SPT25N120F1A1T8TL
Keywords - 2PG352 transistor datasheet
2PG352 cross reference
2PG352 equivalent finder
2PG352 lookup
2PG352 substitution
2PG352 replacement
History: FF1200R17KE3_B2 | SPT25N120F1A1T8TL



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