IRG4PF50WD Todos los transistores

 

IRG4PF50WD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRG4PF50WD

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 200W

Tensión colector-emisor (Vce): 900V

Voltaje de saturación colector-emisor (Vce sat):

Tensión emisor-compuerta (Veg):

Corriente del colector DC máxima (Ic): 28A

Temperatura operativa máxima (Tj), °C: 175

Tiempo de elevación:

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: TO247AC

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IRG4PF50WD Datasheet (PDF)

1.1. irg4pf50w.pdf Size:138K _international_rectifier

IRG4PF50WD
IRG4PF50WD

PD - 91710 IRG4PF50W INSULATED GATE BIPOLAR TRANSISTOR Features C Optimized for use in Welding and Switch-Mode VCES = 900V Power Supply applications Industry benchmark switching losses improve efficiency of all power supply topologies VCE(on) typ. = 2.25V G 50% reduction of Eoff parameter Low IGBT conduction losses @VGE = 15V, IC = 28A E Latest technology IGBT design offe

1.2. irg4pf50wd.pdf Size:358K _international_rectifier

IRG4PF50WD
IRG4PF50WD

PD- 91788 IRG4PF50WD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Optimized for use in Welding and Switch-Mode VCES = 900V Power Supply applications Industry benchmark switching losses improve efficiency of all power supply topologies VCE(on) typ. = 2.25V G 50% reduction of Eoff parameter Low IGBT conduction losses @VGE = 15V, IC = 28A E

 1.3. irg4pf50w.pdf Size:132K _igbt_a

IRG4PF50WD
IRG4PF50WD

PD - 91710 IRG4PF50W INSULATED GATE BIPOLAR TRANSISTOR Features C • Optimized for use in Welding and Switch-Mode VCES = 900V Power Supply applications • Industry benchmark switching losses improve efficiency of all power supply topologies VCE(on) typ. = 2.25V G • 50% reduction of Eoff parameter • Low IGBT conduction losses @VGE = 15V, IC = 28A E • Latest technology IGB

1.4. irg4pf50wd.pdf Size:253K _igbt_a

IRG4PF50WD
IRG4PF50WD

PD- 91788 IRG4PF50WD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Optimized for use in Welding and Switch-Mode VCES = 900V Power Supply applications • Industry benchmark switching losses improve efficiency of all power supply topologies VCE(on) typ. = 2.25V G • 50% reduction of Eoff parameter • Low IGBT conduction losses @VGE = 15V, I

Otros transistores... IRG4PC50FD , IRG4PC50K , IRG4PC50KD , IRG4PC50S , IRG4PC50U , IRG4PC50UD , IRG4PC50W , IRG4PF50W , G12N60C3D , IRG4PH20K , IRG4PH20KD , IRG4PH30K , IRG4PH30KD , IRG4PH40K , IRG4PH40KD , IRG4PH40U , IRG4PH40UD .

 

 
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