Справочник IGBT. IRG4PF50WD

 

IRG4PF50WD - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: IRG4PF50WD

Тип управляющего канала: N-Channel

Максимальная рассеиваемая мощность (Pc): 200W

Предельно-допустимое напряжение коллектор-эмиттер (Uce): 900V

Максимальный постоянный ток коллектора (Ic): 28A

Максимальная температура перехода (Tj): 175

Корпус: TO247AC

Аналог (замена) для IRG4PF50WD

 

 

IRG4PF50WD Datasheet (PDF)

1.1. irg4pf50wd.pdf Size:358K _international_rectifier

IRG4PF50WD
IRG4PF50WD

PD- 91788 IRG4PF50WD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Optimized for use in Welding and Switch-Mode VCES = 900V Power Supply applications Industry benchmark switching losses improve efficiency of all power supply topologies VCE(on) typ. = 2.25V G 50% reduction of Eoff parameter Low IGBT conduction losses @VGE = 15V, IC = 28A E

1.2. irg4pf50w.pdf Size:138K _international_rectifier

IRG4PF50WD
IRG4PF50WD

PD - 91710 IRG4PF50W INSULATED GATE BIPOLAR TRANSISTOR Features C Optimized for use in Welding and Switch-Mode VCES = 900V Power Supply applications Industry benchmark switching losses improve efficiency of all power supply topologies VCE(on) typ. = 2.25V G 50% reduction of Eoff parameter Low IGBT conduction losses @VGE = 15V, IC = 28A E Latest technology IGBT design offe

 1.3. irg4pf50wd.pdf Size:253K _igbt_a

IRG4PF50WD
IRG4PF50WD

PD- 91788 IRG4PF50WD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Optimized for use in Welding and Switch-Mode VCES = 900V Power Supply applications • Industry benchmark switching losses improve efficiency of all power supply topologies VCE(on) typ. = 2.25V G • 50% reduction of Eoff parameter • Low IGBT conduction losses @VGE = 15V, I

1.4. irg4pf50w.pdf Size:132K _igbt_a

IRG4PF50WD
IRG4PF50WD

PD - 91710 IRG4PF50W INSULATED GATE BIPOLAR TRANSISTOR Features C • Optimized for use in Welding and Switch-Mode VCES = 900V Power Supply applications • Industry benchmark switching losses improve efficiency of all power supply topologies VCE(on) typ. = 2.25V G • 50% reduction of Eoff parameter • Low IGBT conduction losses @VGE = 15V, IC = 28A E • Latest technology IGB

Другие IGBT... IRG4PC50FD , IRG4PC50K , IRG4PC50KD , IRG4PC50S , IRG4PC50U , IRG4PC50UD , IRG4PC50W , IRG4PF50W , G12N60C3D , IRG4PH20K , IRG4PH20KD , IRG4PH30K , IRG4PH30KD , IRG4PH40K , IRG4PH40KD , IRG4PH40U , IRG4PH40UD .

 

 
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Список транзисторов

Обновления

IGBT: STGP7NC60KD | STGF7NC60KD | STGB7NC60KD | FGH75T65UPD | STGW38IH120D | MBQ50T65FDSC | SL40N60FL | PDMB100E6 | SSG60N60N | JNG25N120HS |
 

 

 

 

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