All IGBT. IRG4PF50WD Datasheet

 

IRG4PF50WD IGBT. Datasheet pdf. Equivalent

Type Designator: IRG4PF50WD

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 200W

Maximum Collector-Emitter Voltage |Vce|, V: 900V

Maximum Collector Current |Ic|, A: 28A

Maximum Junction Temperature (Tj), °C: 175

Package: TO247AC

IRG4PF50WD Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IRG4PF50WD Datasheet (PDF)

1.1. irg4pf50w.pdf Size:138K _international_rectifier

IRG4PF50WD
IRG4PF50WD

PD - 91710 IRG4PF50W INSULATED GATE BIPOLAR TRANSISTOR Features C Optimized for use in Welding and Switch-Mode VCES = 900V Power Supply applications Industry benchmark switching losses improve efficiency of all power supply topologies VCE(on) typ. = 2.25V G 50% reduction of Eoff parameter Low IGBT conduction losses @VGE = 15V, IC = 28A E Latest technology IGBT design offe

1.2. irg4pf50wd.pdf Size:358K _international_rectifier

IRG4PF50WD
IRG4PF50WD

PD- 91788 IRG4PF50WD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Optimized for use in Welding and Switch-Mode VCES = 900V Power Supply applications Industry benchmark switching losses improve efficiency of all power supply topologies VCE(on) typ. = 2.25V G 50% reduction of Eoff parameter Low IGBT conduction losses @VGE = 15V, IC = 28A E

 1.3. irg4pf50w.pdf Size:132K _igbt_a

IRG4PF50WD
IRG4PF50WD

PD - 91710 IRG4PF50W INSULATED GATE BIPOLAR TRANSISTOR Features C • Optimized for use in Welding and Switch-Mode VCES = 900V Power Supply applications • Industry benchmark switching losses improve efficiency of all power supply topologies VCE(on) typ. = 2.25V G • 50% reduction of Eoff parameter • Low IGBT conduction losses @VGE = 15V, IC = 28A E • Latest technology IGB

1.4. irg4pf50wd.pdf Size:253K _igbt_a

IRG4PF50WD
IRG4PF50WD

PD- 91788 IRG4PF50WD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Optimized for use in Welding and Switch-Mode VCES = 900V Power Supply applications • Industry benchmark switching losses improve efficiency of all power supply topologies VCE(on) typ. = 2.25V G • 50% reduction of Eoff parameter • Low IGBT conduction losses @VGE = 15V, I

Datasheet: IRG4PC50FD , IRG4PC50K , IRG4PC50KD , IRG4PC50S , IRG4PC50U , IRG4PC50UD , IRG4PC50W , IRG4PF50W , G12N60C3D , IRG4PH20K , IRG4PH20KD , IRG4PH30K , IRG4PH30KD , IRG4PH40K , IRG4PH40KD , IRG4PH40U , IRG4PH40UD .

 

 
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