MG06100S-BR1MM Todos los transistores

 

MG06100S-BR1MM - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MG06100S-BR1MM
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 625 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 150 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.9 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 45 nS
   Coesⓘ - Capacitancia de salida, typ: 520 pF
   Paquete / Cubierta: MODULE
     - Selección de transistores por parámetros

 

MG06100S-BR1MM Datasheet (PDF)

 ..1. Size:1801K  littelfuse
 mg06100s-br1mm.pdf pdf_icon

MG06100S-BR1MM

Power Module600V 100A IGBT ModuleRoHSMG06100S-BR1MMFeatures Ultra Low Loss Positive Temperature Coefficient High Ruggedness With Fast Free-Wheeling High Short Circuit DiodesCapabilityApplications Inverter SMPS and UPS Converter Induction Heating WelderAgency ApprovalsAGENCY AGENCY FILE NUMBERE71639Module Characteristics

 9.1. Size:1348K  littelfuse
 mg06150s-bn4mm.pdf pdf_icon

MG06100S-BR1MM

Power Module600V 150A IGBT ModuleRoHSMG06150S-BN4MMFeatures High short circuit Free wheeling diodes capability, self limiting with fast and soft reverse short circuit current recovery VCE(sat) with positive Low switching lossestemperature coefficient Fast switching and short tail currentApplicationsAgency Approvals High frequency Motion/se

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History: MMG300B065PD6TC | SMC7G30US60 | IXGM40N60 | SPT40N120F1CT8TL | APTGT200DA170D3 | IXA20PT1200LB | FD400R65KF1-K

 

 
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