MG06100S-BR1MM Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MG06100S-BR1MM  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 625 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 150 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.9 V @25℃

trⓘ - Tiempo de subida, typ: 45 nS

Coesⓘ - Capacitancia de salida, typ: 520 pF

Encapsulados: MODULE

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MG06100S-BR1MM datasheet

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 mg06100s-br1mm.pdf pdf_icon

MG06100S-BR1MM

Power Module 600V 100A IGBT Module RoHS MG06100S-BR1MM Features Ultra Low Loss Positive Temperature Coefficient High Ruggedness With Fast Free-Wheeling High Short Circuit Diodes Capability Applications Inverter SMPS and UPS Converter Induction Heating Welder Agency Approvals AGENCY AGENCY FILE NUMBER E71639 Module Characteristics

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 mg06150s-bn4mm.pdf pdf_icon

MG06100S-BR1MM

Power Module 600V 150A IGBT Module RoHS MG06150S-BN4MM Features High short circuit Free wheeling diodes capability, self limiting with fast and soft reverse short circuit current recovery VCE(sat) with positive Low switching losses temperature coefficient Fast switching and short tail current Applications Agency Approvals High frequency Motion/se

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