MG06100S-BR1MM IGBT. Datasheet pdf. Equivalent
Type Designator: MG06100S-BR1MM
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 625 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 150 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 45 nS
Coesⓘ - Output Capacitance, typ: 520 pF
Qgⓘ - Total Gate Charge, typ: 230 nC
Package: MODULE
MG06100S-BR1MM Transistor Equivalent Substitute - IGBT Cross-Reference Search
MG06100S-BR1MM Datasheet (PDF)
mg06100s-br1mm.pdf
Power Module600V 100A IGBT ModuleRoHSMG06100S-BR1MMFeatures Ultra Low Loss Positive Temperature Coefficient High Ruggedness With Fast Free-Wheeling High Short Circuit DiodesCapabilityApplications Inverter SMPS and UPS Converter Induction Heating WelderAgency ApprovalsAGENCY AGENCY FILE NUMBERE71639Module Characteristics
mg06150s-bn4mm.pdf
Power Module600V 150A IGBT ModuleRoHSMG06150S-BN4MMFeatures High short circuit Free wheeling diodes capability, self limiting with fast and soft reverse short circuit current recovery VCE(sat) with positive Low switching lossestemperature coefficient Fast switching and short tail currentApplicationsAgency Approvals High frequency Motion/se
Datasheet: DIM800FSM17-A , DIM800FSS12-A , DIM800NSM33-F , DIM800XSM33-F , DIM800XSM45-TS , DIM800XSM45-TS001 , MBN400GR12A , MBN600GR12A , SGT60U65FD1PT , MG06150S-BN4MM , MG06200S-BN4MM , MG06300D-BN4MM , MG06400D-BN1MM , MG06400D-BN4MM , MG06600WB-BN4MM , MG100Q2YS40 , MG100Q2YS50 .
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