MG06150S-BN4MM Todos los transistores

 

MG06150S-BN4MM IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MG06150S-BN4MM
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 500 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 225 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.45 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 30 nS
   Paquete / Cubierta: MODULE
 

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MG06150S-BN4MM PDF specs

 ..1. Size:1348K  littelfuse
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MG06150S-BN4MM

Power Module 600V 150A IGBT Module RoHS MG06150S-BN4MM Features High short circuit Free wheeling diodes capability, self limiting with fast and soft reverse short circuit current recovery VCE(sat) with positive Low switching losses temperature coefficient Fast switching and short tail current Applications Agency Approvals High frequency Motion/se... See More ⇒

 9.1. Size:1801K  littelfuse
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MG06150S-BN4MM

Power Module 600V 100A IGBT Module RoHS MG06100S-BR1MM Features Ultra Low Loss Positive Temperature Coefficient High Ruggedness With Fast Free-Wheeling High Short Circuit Diodes Capability Applications Inverter SMPS and UPS Converter Induction Heating Welder Agency Approvals AGENCY AGENCY FILE NUMBER E71639 Module Characteristics... See More ⇒

Otros transistores... DIM800FSS12-A , DIM800NSM33-F , DIM800XSM33-F , DIM800XSM45-TS , DIM800XSM45-TS001 , MBN400GR12A , MBN600GR12A , MG06100S-BR1MM , CRG40T65AK5HD , MG06200S-BN4MM , MG06300D-BN4MM , MG06400D-BN1MM , MG06400D-BN4MM , MG06600WB-BN4MM , MG100Q2YS40 , MG100Q2YS50 , MG100Q2YS51 .

History: CM100RX-24S1

 

 
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