MG06150S-BN4MM - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MG06150S-BN4MM
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 500 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 225 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.45 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 30 nS
Qgⓘ - Carga total de la puerta, typ: 1600 nC
Paquete / Cubierta: MODULE
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MG06150S-BN4MM Datasheet (PDF)
mg06150s-bn4mm.pdf
Power Module600V 150A IGBT ModuleRoHSMG06150S-BN4MMFeatures High short circuit Free wheeling diodes capability, self limiting with fast and soft reverse short circuit current recovery VCE(sat) with positive Low switching lossestemperature coefficient Fast switching and short tail currentApplicationsAgency Approvals High frequency Motion/se
mg06100s-br1mm.pdf
Power Module600V 100A IGBT ModuleRoHSMG06100S-BR1MMFeatures Ultra Low Loss Positive Temperature Coefficient High Ruggedness With Fast Free-Wheeling High Short Circuit DiodesCapabilityApplications Inverter SMPS and UPS Converter Induction Heating WelderAgency ApprovalsAGENCY AGENCY FILE NUMBERE71639Module Characteristics
Otros transistores... DIM800FSS12-A , DIM800NSM33-F , DIM800XSM33-F , DIM800XSM45-TS , DIM800XSM45-TS001 , MBN400GR12A , MBN600GR12A , MG06100S-BR1MM , IRGP4063 , MG06200S-BN4MM , MG06300D-BN4MM , MG06400D-BN1MM , MG06400D-BN4MM , MG06600WB-BN4MM , MG100Q2YS40 , MG100Q2YS50 , MG100Q2YS51 .
Liste
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