MG06150S-BN4MM Datasheet. Specs and Replacement

Type Designator: MG06150S-BN4MM  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 500 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 225 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.45 V @25℃

tr ⓘ - Rise Time, typ: 30 nS

Package: MODULE

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MG06150S-BN4MM datasheet

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 mg06150s-bn4mm.pdf pdf_icon

MG06150S-BN4MM

Power Module 600V 150A IGBT Module RoHS MG06150S-BN4MM Features High short circuit Free wheeling diodes capability, self limiting with fast and soft reverse short circuit current recovery VCE(sat) with positive Low switching losses temperature coefficient Fast switching and short tail current Applications Agency Approvals High frequency Motion/se... See More ⇒

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MG06150S-BN4MM

Power Module 600V 100A IGBT Module RoHS MG06100S-BR1MM Features Ultra Low Loss Positive Temperature Coefficient High Ruggedness With Fast Free-Wheeling High Short Circuit Diodes Capability Applications Inverter SMPS and UPS Converter Induction Heating Welder Agency Approvals AGENCY AGENCY FILE NUMBER E71639 Module Characteristics... See More ⇒

Specs: DIM800FSS12-A, DIM800NSM33-F, DIM800XSM33-F, DIM800XSM45-TS, DIM800XSM45-TS001, MBN400GR12A, MBN600GR12A, MG06100S-BR1MM, IKW40N120H3, MG06200S-BN4MM, MG06300D-BN4MM, MG06400D-BN1MM, MG06400D-BN4MM, MG06600WB-BN4MM, MG100Q2YS40, MG100Q2YS50, MG100Q2YS51

Keywords - MG06150S-BN4MM transistor spec

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