MG06400D-BN1MM IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MG06400D-BN1MM
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 1400 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 460 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.95 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 65 nS
Coesⓘ - Capacitancia de salida, typ: 1800 pF
Paquete / Cubierta: MODULE
Búsqueda de reemplazo de MG06400D-BN1MM IGBT
MG06400D-BN1MM PDF specs
mg06400d-bn1mm.pdf
Power Module 600V IGBT Family RoHS MG06400D-BN1MM Series 400A Dual IGBT Features Ultra low loss Positive temperature coefficient High ruggedness High short circuit capability Applications Motor drives SMPS and UPS Inverter Welder Agency Approvals Converter Induction Heating AGENCY AGENCY FILE NUMBER E71639 Module Characteristics (T... See More ⇒
mg06400d-bn4mm.pdf
Power Module 600V IGBT Family RoHS MG06400D-BN4MM Series 400A Dual IGBT Features High short circuit Free wheeling diodes capability, self limiting with fast and soft reverse short circuit current recovery VCE(sat) with positive Low switching losses temperature coefficient Fast switching and short tail current Applications Motor drives SMPS and UP... See More ⇒
Otros transistores... DIM800XSM45-TS , DIM800XSM45-TS001 , MBN400GR12A , MBN600GR12A , MG06100S-BR1MM , MG06150S-BN4MM , MG06200S-BN4MM , MG06300D-BN4MM , RJP63K2DPP-M0 , MG06400D-BN4MM , MG06600WB-BN4MM , MG100Q2YS40 , MG100Q2YS50 , MG100Q2YS51 , MG100Q2YS65H , MG10Q6ES50A , MG12100D-BA1MM .
History: BSM300GA120DN2
History: BSM300GA120DN2
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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