MG06400D-BN1MM Datasheet and Replacement
Type Designator: MG06400D-BN1MM
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 1400 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 460 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 65 nS
Coesⓘ - Output Capacitance, typ: 1800 pF
Package: MODULE
- IGBT Cross-Reference
MG06400D-BN1MM Datasheet (PDF)
mg06400d-bn1mm.pdf

Power Module600V IGBT FamilyRoHSMG06400D-BN1MM Series 400A Dual IGBT Features Ultra low loss Positive temperature coefficient High ruggedness High short circuit capabilityApplications Motor drives SMPS and UPS Inverter WelderAgency Approvals Converter Induction HeatingAGENCY AGENCY FILE NUMBERE71639Module Characteristics (T
mg06400d-bn4mm.pdf

Power Module600V IGBT FamilyRoHSMG06400D-BN4MM Series 400A Dual IGBT Features High short circuit Free wheeling diodes capability, self limiting with fast and soft reverse short circuit current recovery VCE(sat) with positive Low switching lossestemperature coefficient Fast switching and short tail currentApplications Motor drives SMPS and UP
Datasheet: DIM800XSM45-TS , DIM800XSM45-TS001 , MBN400GR12A , MBN600GR12A , MG06100S-BR1MM , MG06150S-BN4MM , MG06200S-BN4MM , MG06300D-BN4MM , RJP63K2DPP-M0 , MG06400D-BN4MM , MG06600WB-BN4MM , MG100Q2YS40 , MG100Q2YS50 , MG100Q2YS51 , MG100Q2YS65H , MG10Q6ES50A , MG12100D-BA1MM .
History: IXXH100N60B3
Keywords - MG06400D-BN1MM transistor datasheet
MG06400D-BN1MM cross reference
MG06400D-BN1MM equivalent finder
MG06400D-BN1MM lookup
MG06400D-BN1MM substitution
MG06400D-BN1MM replacement
History: IXXH100N60B3



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IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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