MG06400D-BN1MM IGBT. Datasheet pdf. Equivalent
Type Designator: MG06400D-BN1MM
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 1400 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 460 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 65 nS
Coesⓘ - Output Capacitance, typ: 1800 pF
Qgⓘ - Total Gate Charge, typ: 1800 nC
Package: MODULE
MG06400D-BN1MM Transistor Equivalent Substitute - IGBT Cross-Reference Search
MG06400D-BN1MM Datasheet (PDF)
mg06400d-bn1mm.pdf
Power Module600V IGBT FamilyRoHSMG06400D-BN1MM Series 400A Dual IGBT Features Ultra low loss Positive temperature coefficient High ruggedness High short circuit capabilityApplications Motor drives SMPS and UPS Inverter WelderAgency Approvals Converter Induction HeatingAGENCY AGENCY FILE NUMBERE71639Module Characteristics (T
mg06400d-bn4mm.pdf
Power Module600V IGBT FamilyRoHSMG06400D-BN4MM Series 400A Dual IGBT Features High short circuit Free wheeling diodes capability, self limiting with fast and soft reverse short circuit current recovery VCE(sat) with positive Low switching lossestemperature coefficient Fast switching and short tail currentApplications Motor drives SMPS and UP
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