MG150J1BS11 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MG150J1BS11
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 450 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 150 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.3 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 300 nS
Paquete / Cubierta: MODULE
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MG150J1BS11 Datasheet (PDF)
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Otros transistores... MG12450WB-BN2MM , MG1250H-XN2MM , MG1250S-BA1MM , MG1250W-XBN2MM , MG1275H-XN2MM , MG1275S-BA1MM , MG1275W-XBN2MM , MG1275W-XN2MM , SGT40N60FD2PN , MG150J2YS50 , MG150J7KS60 , MG150Q2YS40 , MG150Q2YS50 , MG150Q2YS51 , MG150Q2YS65H , MG15J6ES40 , MG15Q6ES42 .



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