MG150J1BS11 Todos los transistores

 

MG150J1BS11 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MG150J1BS11
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Máxima potencia disipada (Pc), W: 450
   Tensión máxima colector-emisor |Vce|, V: 600
   Tensión máxima puerta-emisor |Vge|, V: 20
   Colector de Corriente Continua a 25℃ |Ic|, A: 150
   Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 2.3
   Temperatura máxima de unión (Tj), ℃: 150
   Tiempo de subida (tr), typ, nS: 300
   Paquete / Cubierta: MODULE

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MG150J1BS11 Datasheet (PDF)

 ..1. Size:102K  toshiba
mg150j1bs11.pdf

MG150J1BS11 MG150J1BS11

 7.1. Size:136K  macmic
mmg150j120uz6tn.pdf

MG150J1BS11 MG150J1BS11

MMG150J120UZ6TN1200V 150A IGBT ModuleFebruary 2017 Version 1 RoHS CompliantPRODUCT FEATURES IGBT3 Chip(Trench+Field Stop technology) Low switching losses VCE(sat) with positive temperature coefficient Fast switching and short tail current Popular SOT-227 PackageAPPLICATIONS AC motor control Motion/servo control Inverter and power suppliesIGBTA

 7.2. Size:251K  macmic
mmg150j120uz6tc.pdf

MG150J1BS11 MG150J1BS11

MMG150J120UZ6TC1200V 150A IGBT ModuleMay 2020 Version 01 RoHS CompliantPRODUCT FEATURES IGBT CHIP(Trench+Field Stop technology) Low switching losses VCE(sat) with positive temperature coefficient Fast switching and short tail current Popular SOT-227 PackageAPPLICATIONS AC motor control Motion/servo control Inverter and power suppliesIGBTABSOLU

 8.1. Size:91K  toshiba
mg150j2ys50.pdf

MG150J1BS11 MG150J1BS11

MG150J2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG150J2YS50 Unit: mmHigh Power Switching Applications Motor Control Applications The electrodes are isolated from case High input impedance Includes a complete half bridge in one package Enhancement-mode High speed : t = 0.30s (Max) (I = 150A) f Ct = 0.15s (Max) (I = 150A) rr F Low saturation volta

 8.2. Size:291K  toshiba
mg150j7ks60.pdf

MG150J1BS11 MG150J1BS11

MG150J7KS60 TOSHIBA GTR Module Silicon N Channel IGBT MG150J7KS60 (600V/150A 7in1) High Power Switching Applications Motor Control Applications Integrates inverter and brake power circuit into a single package The electrodes are isolated from case. Low thermal resistance VCE (sat) = 1.6 V (typ.) Equivalent Circuit P143 7 11154 8 12UB VW16 17

Otros transistores... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , SGT40N60FD2PN , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

 

 
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