Справочник IGBT. MG150J1BS11

 

MG150J1BS11 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: MG150J1BS11
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 450 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 150 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.3 V @25℃
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 300 nS
   Тип корпуса: MODULE

 Аналог (замена) для MG150J1BS11

 

 

MG150J1BS11 Datasheet (PDF)

 ..1. Size:102K  toshiba
mg150j1bs11.pdf

MG150J1BS11
MG150J1BS11

 7.1. Size:136K  macmic
mmg150j120uz6tn.pdf

MG150J1BS11
MG150J1BS11

MMG150J120UZ6TN1200V 150A IGBT ModuleFebruary 2017 Version 1 RoHS CompliantPRODUCT FEATURES IGBT3 Chip(Trench+Field Stop technology) Low switching losses VCE(sat) with positive temperature coefficient Fast switching and short tail current Popular SOT-227 PackageAPPLICATIONS AC motor control Motion/servo control Inverter and power suppliesIGBTA

 7.2. Size:251K  macmic
mmg150j120uz6tc.pdf

MG150J1BS11
MG150J1BS11

MMG150J120UZ6TC1200V 150A IGBT ModuleMay 2020 Version 01 RoHS CompliantPRODUCT FEATURES IGBT CHIP(Trench+Field Stop technology) Low switching losses VCE(sat) with positive temperature coefficient Fast switching and short tail current Popular SOT-227 PackageAPPLICATIONS AC motor control Motion/servo control Inverter and power suppliesIGBTABSOLU

 8.1. Size:91K  toshiba
mg150j2ys50.pdf

MG150J1BS11
MG150J1BS11

MG150J2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG150J2YS50 Unit: mmHigh Power Switching Applications Motor Control Applications The electrodes are isolated from case High input impedance Includes a complete half bridge in one package Enhancement-mode High speed : t = 0.30s (Max) (I = 150A) f Ct = 0.15s (Max) (I = 150A) rr F Low saturation volta

 8.2. Size:291K  toshiba
mg150j7ks60.pdf

MG150J1BS11
MG150J1BS11

MG150J7KS60 TOSHIBA GTR Module Silicon N Channel IGBT MG150J7KS60 (600V/150A 7in1) High Power Switching Applications Motor Control Applications Integrates inverter and brake power circuit into a single package The electrodes are isolated from case. Low thermal resistance VCE (sat) = 1.6 V (typ.) Equivalent Circuit P143 7 11154 8 12UB VW16 17

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