MG150J1BS11 Specs and Replacement
Type Designator: MG150J1BS11
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 450 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 150 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃
Package: MODULE MG150J1BS11 Substitution - IGBTⓘ Cross-Reference Search
MG150J1BS11 datasheet
mmg150j120uz6tn.pdf
MMG150J120UZ6TN 1200V 150A IGBT Module February 2017 Version 1 RoHS Compliant PRODUCT FEATURES IGBT3 Chip(Trench+Field Stop technology) Low switching losses VCE(sat) with positive temperature coefficient Fast switching and short tail current Popular SOT-227 Package APPLICATIONS AC motor control Motion/servo control Inverter and power supplies IGBT A... See More ⇒
mmg150j120uz6tc.pdf
MMG150J120UZ6TC 1200V 150A IGBT Module May 2020 Version 01 RoHS Compliant PRODUCT FEATURES IGBT CHIP(Trench+Field Stop technology) Low switching losses VCE(sat) with positive temperature coefficient Fast switching and short tail current Popular SOT-227 Package APPLICATIONS AC motor control Motion/servo control Inverter and power supplies IGBT ABSOLU... See More ⇒
mg150j2ys50.pdf
MG150J2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG150J2YS50 Unit mm High Power Switching Applications Motor Control Applications The electrodes are isolated from case High input impedance Includes a complete half bridge in one package Enhancement-mode High speed t = 0.30 s (Max) (I = 150A) f C t = 0.15 s (Max) (I = 150A) rr F Low saturation volta... See More ⇒
Specs: MG12450WB-BN2MM, MG1250H-XN2MM, MG1250S-BA1MM, MG1250W-XBN2MM, MG1275H-XN2MM, MG1275S-BA1MM, MG1275W-XBN2MM, MG1275W-XN2MM, SGT40N60FD2PN, MG150J2YS50, MG150J7KS60, MG150Q2YS40, MG150Q2YS50, MG150Q2YS51, MG150Q2YS65H, MG15J6ES40, MG15Q6ES42
Keywords - MG150J1BS11 transistor spec
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