MG200Q1US51 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MG200Q1US51
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 1500 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 300 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.8 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 50 nS
Paquete / Cubierta: MODULE
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MG200Q1US51 Datasheet (PDF)
mmg200q120b6hn.pdf

MMG200Q120B6HN1200V 200A IGBT ModuleApril 2015 Version 01 RoHS CompliantPRODUCT FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(T4 Fast Trench+Field Stop technology) VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching lo
mmg200q120b6tc.pdf

MMG200Q120B6TC1200V 200A IGBT ModuleSeptember 2020 Version 01 RoHS CompliantPRODUCT FEATURES IGBT CHIP(Trench+Field Stop technology) VCE(sat) with positive temperature coefficient High short circuit capability Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching lossesAPPLICATIONS High frequency s
Otros transistores... MG17300WB-BN4MM , MG17450WB-BN4MM , MG1750S-BN4MM , MG1775S-BN4MM , MG200J2YS50 , MG200J6ES60 , MG200J6ES61 , MG200Q1US41 , IRGP4066D , MG200Q2YS40 , MG200Q2YS50 , MG200Q2YS65H , MG25J6ES40 , MG25N2YS1 , MG25Q1BS11 , MG25Q2YS40 , MG25Q6ES42 .
History: BLG40T65FUK-F | NGTB30N120FL2 | IRG4BC10SD-L | GT30J311 | BLG60T65FDK-K | IRGS4640D
History: BLG40T65FUK-F | NGTB30N120FL2 | IRG4BC10SD-L | GT30J311 | BLG60T65FDK-K | IRGS4640D



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