MG200Q1US51 Todos los transistores

 

MG200Q1US51 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MG200Q1US51
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 1500 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 300 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.8 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 50 nS
   Paquete / Cubierta: MODULE
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MG200Q1US51 Datasheet (PDF)

 ..1. Size:120K  toshiba
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MG200Q1US51

 5.1. Size:253K  toshiba
mg200q1us41.pdf pdf_icon

MG200Q1US51

 7.1. Size:411K  macmic
mmg200q120b6hn.pdf pdf_icon

MG200Q1US51

MMG200Q120B6HN1200V 200A IGBT ModuleApril 2015 Version 01 RoHS CompliantPRODUCT FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(T4 Fast Trench+Field Stop technology) VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching lo

 7.2. Size:295K  macmic
mmg200q120b6tc.pdf pdf_icon

MG200Q1US51

MMG200Q120B6TC1200V 200A IGBT ModuleSeptember 2020 Version 01 RoHS CompliantPRODUCT FEATURES IGBT CHIP(Trench+Field Stop technology) VCE(sat) with positive temperature coefficient High short circuit capability Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching lossesAPPLICATIONS High frequency s

Otros transistores... MG17300WB-BN4MM , MG17450WB-BN4MM , MG1750S-BN4MM , MG1775S-BN4MM , MG200J2YS50 , MG200J6ES60 , MG200J6ES61 , MG200Q1US41 , IRGP4066D , MG200Q2YS40 , MG200Q2YS50 , MG200Q2YS65H , MG25J6ES40 , MG25N2YS1 , MG25Q1BS11 , MG25Q2YS40 , MG25Q6ES42 .

History: BLG40T65FUK-F | NGTB30N120FL2 | IRG4BC10SD-L | GT30J311 | BLG60T65FDK-K | IRGS4640D

 

 
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