All IGBT. MG200Q1US51 Datasheet

 

MG200Q1US51 Datasheet and Replacement


   Type Designator: MG200Q1US51
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 1500 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 300 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.8 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 50 nS
   Package: MODULE
      - IGBT Cross-Reference

 

MG200Q1US51 Datasheet (PDF)

 ..1. Size:120K  toshiba
mg200q1us51.pdf pdf_icon

MG200Q1US51

 5.1. Size:253K  toshiba
mg200q1us41.pdf pdf_icon

MG200Q1US51

 7.1. Size:411K  macmic
mmg200q120b6hn.pdf pdf_icon

MG200Q1US51

MMG200Q120B6HN1200V 200A IGBT ModuleApril 2015 Version 01 RoHS CompliantPRODUCT FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(T4 Fast Trench+Field Stop technology) VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching lo

 7.2. Size:295K  macmic
mmg200q120b6tc.pdf pdf_icon

MG200Q1US51

MMG200Q120B6TC1200V 200A IGBT ModuleSeptember 2020 Version 01 RoHS CompliantPRODUCT FEATURES IGBT CHIP(Trench+Field Stop technology) VCE(sat) with positive temperature coefficient High short circuit capability Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching lossesAPPLICATIONS High frequency s

Datasheet: MG17300WB-BN4MM , MG17450WB-BN4MM , MG1750S-BN4MM , MG1775S-BN4MM , MG200J2YS50 , MG200J6ES60 , MG200J6ES61 , MG200Q1US41 , IRGP4066D , MG200Q2YS40 , MG200Q2YS50 , MG200Q2YS65H , MG25J6ES40 , MG25N2YS1 , MG25Q1BS11 , MG25Q2YS40 , MG25Q6ES42 .

Keywords - MG200Q1US51 transistor datasheet

 MG200Q1US51 cross reference
 MG200Q1US51 equivalent finder
 MG200Q1US51 lookup
 MG200Q1US51 substitution
 MG200Q1US51 replacement

 

 
Back to Top

 


 
.