Справочник IGBT. MG200Q1US51

 

MG200Q1US51 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: MG200Q1US51
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 1500 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 300 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.8 V @25℃
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 50 nS
   Тип корпуса: MODULE

 Аналог (замена) для MG200Q1US51

 

 

MG200Q1US51 Datasheet (PDF)

 ..1. Size:120K  toshiba
mg200q1us51.pdf

MG200Q1US51
MG200Q1US51

 5.1. Size:253K  toshiba
mg200q1us41.pdf

MG200Q1US51
MG200Q1US51

 7.1. Size:411K  macmic
mmg200q120b6hn.pdf

MG200Q1US51
MG200Q1US51

MMG200Q120B6HN1200V 200A IGBT ModuleApril 2015 Version 01 RoHS CompliantPRODUCT FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(T4 Fast Trench+Field Stop technology) VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching lo

 7.2. Size:295K  macmic
mmg200q120b6tc.pdf

MG200Q1US51
MG200Q1US51

MMG200Q120B6TC1200V 200A IGBT ModuleSeptember 2020 Version 01 RoHS CompliantPRODUCT FEATURES IGBT CHIP(Trench+Field Stop technology) VCE(sat) with positive temperature coefficient High short circuit capability Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching lossesAPPLICATIONS High frequency s

 7.3. Size:407K  macmic
mmg200q120b6tn.pdf

MG200Q1US51
MG200Q1US51

MMG200Q120B6TN1200V 200A IGBT ModuleApril 2015 Version 01 RoHS CompliantPRODUCT FEATURES IGBT3 CHIP(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching lossesA

 7.4. Size:372K  macmic
mmg200q120b.pdf

MG200Q1US51
MG200Q1US51

MMG200Q120B 1200V 200A IGBT Module February 2011 PRELIMINARY RoHS Compliant FEATURES Ultra Low Loss High Ruggedness High Short Circuit Capability VCE(sat) With Positive Temperature Coefficient With Fast Free-Wheeling Diodes APPLICATIONS Inverter Convertor GQ Series Module Welder SMPS and UPS Induction Heating ABSOLUTE MAXIM

 7.5. Size:337K  macmic
mmg200q120ua6tc.pdf

MG200Q1US51
MG200Q1US51

MMG200Q120UA6TC1200V 200A IGBT ModuleSeptember 2020 Version 01 RoHS CompliantPRODUCT FEATURES IGBT CHIP(Trench+Field Stop technology) VCE(sat) with positive temperature coefficient High short circuit capability Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching lossesAPPLICATIONS High frequency

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