MG50Q6ES40 Todos los transistores

 ..1. Size:262K  toshiba
 mg50q6es40.pdf

 6.1. Size:115K  toshiba
 mg50q6es50a.pdf

 9.1. Size:89K  toshiba
 mg50q2ys50.pdf

MG50Q2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG50Q2YS50 High Power Switching Applications Unit mm Motor Control Applications High input impedance High speed t = 0.3 s (Max) f @Inductive load Low saturation voltage V = 3.6V (Max) CE (sat) Enhancement-mode Includes a complete half bridge in one package. The electrodes are isolated from case.

 9.2. Size:105K  toshiba
 mg50q1bs11.pdf

 9.3. Size:179K  toshiba
 mg50q2ys40.pdf

MG50Q2YS40 TOSHIBA GTR Module Silicon N Channel IGBT MG50Q2YS40 High Power Switching Applications. Unit in mm Motor Control Applications. High input impedance High speed tf = 0.5 s (max.) trr = 0.5 s (max.) Low saturation voltage V = 4.0V (max.) CE(sat) Enhancement-mode Includes a complete half bridge in one package. The electrodes are isola