MG50Q6ES40 Datasheet and Replacement
Type Designator: MG50Q6ES40
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 250 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 50 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 300 nS
Package: MODULE
- IGBT Cross-Reference
MG50Q6ES40 Datasheet (PDF)
mg50q2ys50.pdf
MG50Q2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG50Q2YS50 High Power Switching Applications Unit: mmMotor Control Applications High input impedance High speed : t = 0.3s (Max) f @Inductive load Low saturation voltage : V = 3.6V (Max) CE (sat) Enhancement-mode Includes a complete half bridge in one package. The electrodes are isolated from case.
Datasheet: MG300Q2YS40 , MG300Q2YS50 , MG50J1BS11 , MG50J2YS50 , MG50J6ES50 , MG50Q1BS11 , MG50Q2YS40 , MG50Q2YS50 , SGT60U65FD1PT , MG50Q6ES50A , MG600Q1US51 , MG75J1BS11 , MG75J1ZS40 , MG75J1ZS50 , MG75J2YS50 , MG75J2YS91 , MG75J6ES50 .
History: IXXH100N60B3
Keywords - MG50Q6ES40 transistor datasheet
MG50Q6ES40 cross reference
MG50Q6ES40 equivalent finder
MG50Q6ES40 lookup
MG50Q6ES40 substitution
MG50Q6ES40 replacement
History: IXXH100N60B3
LIST
Last Update
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
Popular searches
2sc2603 | jcs50n20wt | 2sa1360 | p60nf06 datasheet | 2sc4468 | ru6888r | 2sc1815y | ktc3964